Results 181 to 190 of about 573,156 (305)

GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching

open access: yesAdvanced Functional Materials, EarlyView.
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich   +13 more
wiley   +1 more source

Observation of critical scaling in the Bose gas universality class. [PDF]

open access: yesSci Adv
Kleebank L   +6 more
europepmc   +1 more source

Switching Superconductivity with Uniaxial Strain in a high‐Tc${\rm T}_{c}$ Cuprate Superconductor

open access: yesAdvanced Functional Materials, EarlyView.
Uniaxial strain is demonstrated as a new scheme for a superconductivity switch. Exploiting the large strain‐induced Tc shift in a cuprate superconductor enables robust switching between superconducting and normal states over 100 cycles with only 0.1% strain.
Baizhi Gao   +3 more
wiley   +1 more source

Tantalum–Palladium Ultrathin Resistance Hydrogen Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Nanoconfined Ta‐alloy thin films enable fast, reversible hydrogen sensing by suppressing unwanted phase transitions. A Ta0.88${\rm Ta}_{0.88}$Pd0.12${\rm Pd}_{0.12}$ sensing layer delivers hysteresis‐free detection from ppb to 100% H2${\rm H}_2$ at room temperature.
Folkert Isaäc Bernhard Straus   +2 more
wiley   +1 more source

Programming Neuromorphic Plasticity Through Ionic and Electronic Coupling in Organic Electrochemical Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee   +9 more
wiley   +1 more source

Low‐Flicker‐Noise MoS2 Transistors Enabled by High‐κ Rare‐Earth Oxychlorides for Mixed‐Signal Electronics

open access: yesAdvanced Functional Materials, EarlyView.
Single‐crystalline LaOCl and GdOCl form atomically abrupt, Cl‐terminated interfaces with MoS2, enabling near‐ideal switching and suppressed flicker noise. Carrier‐number‐fluctuation analysis yields effective noise‐derived interface trap densities of 1.15–1.94 × 1010 cm−2 eV−1, approaching hexagonal boron nitride levels with high‐κ coupling.
Chanho Lee   +10 more
wiley   +1 more source

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