Results 81 to 90 of about 77,481 (274)

Imaging isodensity contours of molecular states with STM

New Journal of Physics, 2017
We present an improved way for imaging the density of states of a sample with a scanning tunneling microscope, which consists in mapping the surface topography while keeping the differential conductance (d I /d V ) constant.
Gaël Reecht, Benjamin W Heinrich, Hervé Bulou, Fabrice Scheurer, Laurent Limot, Guillaume Schull   +5 more
doaj   +1 more source

Fermi level pinning at the Ge(001) surface - A case for non-standard explanation

, 2015
To explore the origin of the Fermi level pinning in germanium we investigate the Ge(001) and Ge(001):H surfaces. The absence of relevant surface states in the case of Ge(001):H should unpin the surface Fermi level. This is not observed.
Godlewski, Szymon, Kolmer, Marek, Lis, Jakub, Such, Bartosz, Szymonski, Marek, Wojtaszek, Mateusz, Zuzak, Rafal   +6 more
core   +1 more source

Investigation of Halogen Substitution Effects in π‐Conjugated Organic Ligands of Chiral Hybrid Perovskites on Their Chiroptical Activity

Advanced Functional Materials, EarlyView.
The role of novel thiophene‐based ligands with halogen substitutions in enhancing the chiroptical and optoelectronic properties of 2D chiral HOIPs has been investigated. By tailoring ligand design, enhanced CD and CPL properties are achieved, with improved CPL discrimination in photodetectors.
Boesung Kwon, Doyeong Yeo, In‐Chul Hwang, In Hwan Jung, Joon Hak Oh   +4 more
wiley   +1 more source

Simulation of sub-nm carrier profiling by scanning frequency comb microscopy

AIP Advances, 2019
A mode-locked laser focused on the tunneling junction of a scanning tunneling microscope (STM) superimposes a microwave frequency comb with hundreds of harmonics on the DC tunneling current.
M. J. Hagmann, J. Wiedemeier
doaj   +1 more source

Engineering Negative Differential Conductance with the Cu(111) Surface State

, 2011
Low-temperature scanning tunneling microscopy and spectroscopy are employed to investigate electron tunneling from a C60-terminated tip into a Cu(111) surface.
B. W. Heinrich, D.-J. Choi, L. Limot, M. V. Rastei, R. L. Carter, T. Frederiksen   +5 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Observation of tunneling gap in epitaxial ultrathin films of pyrite-type copper disulfide

, 2018
We report scanning tunneling microscopy investigation on epitaxial ultrathin films of pyrite-type copper disulfide. Layer by layer growth of CuS2 films with a preferential orientation of (111) on SrTiO3(001) and Bi2Sr2CaCu2O8+{\delta} substrates is ...
He, Ke, Li, Wei, Liu, Chong, Ma, Xu-Cun, Song, Can-Li, Wang, Lili, Xue, Qi-Kun, Yang, Haohao   +7 more
core   +1 more source

Furan‐Substituted Phosphine‐Oxide as an Efficient Interfacial Modifier for Wide‐Bandgap Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong, Juan Anthony Prayogo, Soobin Heo, Jae Sung Yun, Dong Ryeol Whang, Dong Wook Chang, Hui Joon Park   +6 more
wiley   +1 more source

Halogen Bonds Fabricate 2D Molecular Self-Assembled Nanostructures by Scanning Tunneling Microscopy

Crystals, 2020
Halogen bonds are currently new noncovalent interactions due to their moderate strength and high directionality, which are widely investigated in crystal engineering.
Yi Wang, Xinrui Miao, Wenli Deng
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source