Results 201 to 210 of about 20,734 (282)

Prmt6 Deficiency or Inhibition Restores Microglial Homeostasis and Promotes Scar‐Limited Repair in Adult Spinal Cord Injury

Advanced Science, EarlyView.
After spinal cord injury, adult microglia remain persistently activated with chronic PRMT6 (protein arginine methyltransferase 6) upregulation. Prmt6 deficiency or inhibition reestablishes microglial homeostasis and promotes a scar‐limited repairment, enhancing axonal regrowth.
Weilin Peng, Zhengqiang Wu, Yu Xiong, Zhongya Gao, Yishan Liu, Ziyi Wang, Haibin Wang, Chaofeng Han, Wenxiang Chu, Xuhua Lu   +9 more
wiley   +1 more source

Superconducting gap of H₃S measured by tunnelling spectroscopy. [PDF]

Nature
Du F, Drozdov AP, Minkov VS, Balakirev FF, Kong P, Smith GA, Yan J, Shen B, Gegenwart P, Eremets MI.   +9 more
europepmc   +1 more source

Memristive Physical Reservoir Computing

Advanced Science, EarlyView.
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao, Ziyuan Wang, Jingrui Wang, Li Zhang, Xianhua Wei, Lingxiang Hu, Zongxiao Li, Athanasios V. Vasilakos, Zhizhen Ye, Fei Zhuge   +9 more
wiley   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, EarlyView.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

Electric field-tunable ferromagnetism in a van der Waals semiconductor up to room temperature. [PDF]

Nat Commun
Fu D, Liu J, Hou F, Chang X, Qu T, Félisaz J, Krishnaswamy GK, Grebenchuk S, Jie Y, Watanabe K, Taniguchi T, Pereira VM, Novoselov KS, Koperski M, Yakovlev NL, Soumyanarayanan A, Avsar A, Yazyev OV, Lin J, Özyilmaz B.   +19 more
europepmc   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

An electrically controlled single-molecule spin switch. [PDF]

Nat Commun
Huang W, Au-Yeung KH, Greule P, Stark M, Sürgers C, Wernsdorfer W, Robles R, Lorente N, Willke P.   +8 more
europepmc   +1 more source

Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors

Advanced Electronic Materials, EarlyView.
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang, Qingli Zhang, Yuting Liu, Binbin Liu, Zhiping Zheng, Guangda Niu, Ling Xu   +6 more
wiley   +1 more source

Structural, dielectric, optical, and magnetic properties of ferrite-double perovskites for potential industrial applications. [PDF]

RSC Adv
Sahoo S, Mishra S, Chouhan H, Nayak NC, Parida BN, Padhee R, Parida SK, Parida R.   +7 more
europepmc   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source