Results 241 to 250 of about 12,647,321 (340)

Giant Anisotropic Spin Absorption in Chiral Hybrid Semiconductors

open access: yesAdvanced Materials, EarlyView.
Researchers uncover that chiral hybrid organic–inorganic semiconductors absorb spin differently depending on its polarization direction. This anisotropic spin absorption is primarily driven by the local symmetry breaking within the layered structure.
Cong Yang   +12 more
wiley   +1 more source

1T‐to‐2H Phase Evolution During Epitaxial Growth of Transition Metal Dichalcogenides

open access: yesAdvanced Materials, EarlyView.
During MOCVD growth of MoS2 and WSe2, a transient metallic 1T phase emerges in early, edge‐rich, chalcogen‐deficient domains and declines as the films ultimately coalesce as 2H material. Together, experiments and ReaxFF simulations link domain size, edge stoichiometry, and vacancies to this evolution.
Andrew R. Graves   +8 more
wiley   +1 more source

Breaking Bottlenecks in Solid Electrolyte Discovery With Large Artificial Intelligence Models

open access: yesAdvanced Materials, EarlyView.
Large AI models are presented as a route to break key bottlenecks in solid electrolyte discovery by linking materials databases, machine‐learning interatomic potentials, large language models, and autonomous experiments. This perspective highlights how AI can accelerate the identification of solid electrolytes with fast ion transport, stable interfaces,
Eric Jianfeng Cheng   +24 more
wiley   +1 more source

Turning Nd‐Fe‐B Swarf Into High‐Value Bulk Feedstocks via Sustainable Hydrogen Plasma: From Rare‐Earth Oxides to Metals and Hydrides

open access: yesAdvanced Materials, EarlyView.
Oxidized Nd‐Fe‐B magnet swarf is transformed into valuable bulk feedstock through a single‐step hydrogen plasma process. The reaction converts complex rare‐earth‐containing waste into separated metallic, oxide, and hydride fractions without acid leaching.
Naritai Chimed   +9 more
wiley   +1 more source

Thickness‐Defined Transport Regime Toward Near‐Ideal Area‐Type Switching

open access: yesAdvanced Materials, EarlyView.
By thinning the oxide layer, memristors pass from diode‐like and battery‐effect‐dominated behavior toward eventual short‐circuit failure. Within the intermediate 5–6 nm window, they reach a near‐ideal analog area‐type switching regime, featuring symmetric hysteresis, area‐dependent conductance, and continuous linear programming of HRS and LRS with ...
Cuo Wu   +12 more
wiley   +1 more source

Quantification of Magnetic Interactions in van der Waals Heterostructures Using Lorentz Transmission Electron Microscopy and Off‐Axis Electron Holography

open access: yesAdvanced Materials, EarlyView.
Cross‐sectional Lorentz TEM and off‐axis electron holography visualize the magnetic domain structure and quantify interlayer coupling in Fe3GeTe2/graphite/Fe3GeTe2 heterostructures. A stray‐field coupling length of 37±$\pm$7 nm marks the onset of domain misalignment between the layers.
Joachim Dahl Thomsen   +6 more
wiley   +1 more source

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