Results 211 to 220 of about 959,636 (290)

Beyond Charge: Field‐Effect Transistors in Multimodal Biosensing Platforms for Biomolecular Interaction Studies

open access: yesAdvanced Electronic Materials, EarlyView.
This review summarizes the developments in field‐effect transistor (FET)‐based dual‐mode sensor platforms and what can be learned from them. It identifies charge as a crucial factor in biomolecular interactions at interfaces, outlines the challenges of hybrid systems, and highlights their benefits.
Roger Hasler   +4 more
wiley   +1 more source

Special Issue Editorial: Advanced Science for Tissue‐Interfaced Organic Bioelectronics

open access: yes
Advanced Science, EarlyView.
Tae‐il Kim   +2 more
wiley   +1 more source

Experimental Demonstration of Temporally Aware Fault‐Tolerant Sensor Fusion Using Memristive Associative Learning

open access: yesAdvanced Electronic Materials, EarlyView.
In dynamic driving scenarios, the proposed approach ensures only temporally aligned sensor inputs to make driving decisions, preventing false activations. By enabling selective hardware‐level learning, it achieves fast, reliable responses under noisy conditions.
Kapil Bhardwaj   +4 more
wiley   +1 more source

Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS<sub>2</sub> for scalable 2D electronics. [PDF]

open access: yesNat Commun
Sakuma Y   +18 more
europepmc   +1 more source

Organic Electrochemical Transistors for Energy‐Autonomous Bioelectronics: Materials, Devices, and System Integration

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys organic electrochemical transistors as core building blocks for energy‐autonomous bio‐integrated electronics. We outline device physics, OMIEC materials, and electrolyte effects that enable sub‐volt, high‐gain operation, and discuss direct coupling with mechanical, thermal, and optical energy harvesters to realize battery‐free ...
Jonggeun Park   +3 more
wiley   +1 more source

Negative Feedback in Hf0.5Zr0.5O2 Resistive Memory: Feigenbaum Route Toward Two‐Terminal Pseudo‐Random Number Generation and Neural Network Instabilities

open access: yesAdvanced Electronic Materials, EarlyView.
Resistively switching TiN/Hf0.5Zr0.5/Au valance‐change memory devices show period‐doubling bifurcations, arising from competing influences of filamentary counter‐eightwise filamentary switching and eigthwise electrochemical oxygen exchange at the active electrode.
Sebastian Obernberger   +4 more
wiley   +1 more source

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