Results 221 to 230 of about 1,270,531 (339)
An intelligent IDS using bagging based fuzzy CNN for secured communication in vehicular networks. [PDF]
Anand M, Muthurajkumar S.
europepmc +1 more source
DWFS: A Wrapper Feature Selection Tool Based on a Parallel Genetic Algorithm
Othman Soufan+3 more
openalex +2 more sources
Zinc‐air batteries demonstrate great potential for sustainable energy storage but face major anode‐related challenges. This review provides a mechanism‐driven overview of zinc anode interfacial issues, e.g. dendrite formation, passivation, self‐corrosion, and hydrogen evolution; and explores advances in electrode, surface, and electrolyte engineering ...
Hong Zhao+2 more
wiley +1 more source
Forecasting second-hand house prices in China using the GA-PSO-BP neural network model. [PDF]
Wang J, Ji H, Wang L.
europepmc +1 more source
Biosupercapacitors for Human‐Powered Electronics
Biosupercapacitors are emerging as biocompatible and integrative energy systems for next‐generation bioelectronics, offering rapid charge–discharge performance and mechanical adaptability. This review systematically categorizes their applications from external to organ‐level systems and highlights their multifunctional roles in sensing, actuation, and ...
Suhyeon Kim+7 more
wiley +1 more source
Genetic feature selection algorithm as an efficient glioma grade classifier. [PDF]
Lin TH, Lin HY.
europepmc +1 more source
This study demonstrated single‐crystalline PbTiO3‐based memristors with atomically sharp interfaces, well‐ordered lattices, and minimal lattice mismatch. The devices exhibited an ON/OFF ratio exceeding 105, high stability, and rich resistance‐state modulation.
Haining Li+7 more
wiley +1 more source
The relationship between the doping induced microstructure and thermal conductivity changes is elucidated for conjugated polymers. Eight conjugated polymers with different doping systems are studied, showing varied thermal conductivity responses based on structural order.
Jiali Guo+13 more
wiley +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang+6 more
wiley +1 more source