Results 251 to 260 of about 240,671 (273)
Some of the next articles are maybe not open access.
Self-aligned growth of carbon nanosticks
Nanotechnology, 2008Pulsed laser deposition of carbon on LiNbO(3) as substrate material leads for certain process parameters to the growth of self-aligned carbon stick-like nanoparticles (so called nanosticks). The carbon nanosticks and the growth conditions were investigated in detail by means of atomic force microscopy, scanning electron microscopy and conductivity ...
Kölbl, D. +3 more
openaire +3 more sources
Self-Aligned Nanolithography in a Nanogap
Nano Letters, 2009A self-aligned nanolithography approach is reported to form a nanoscale via hole in a nanogap. Field emission between two opposite electrodes of a nanogap is used to expose the polymer resist within the nanogap region. A via hole pattern forms in the nanogap area after the exposure process.
Yung-Chen, Lin, Jingwei, Bai, Yu, Huang
openaire +2 more sources
1955
Abstract : It is suggested that the head and the motor of a fin-stabilized rocket be joined not rigidly, but by a trapezoidal linkage, with the larger parallel side of the linkage located forward and joined to the motor, so that the linkage is under tension and is stable with respect to the angle between the head and the motor.
openaire +1 more source
Abstract : It is suggested that the head and the motor of a fin-stabilized rocket be joined not rigidly, but by a trapezoidal linkage, with the larger parallel side of the linkage located forward and joined to the motor, so that the linkage is under tension and is stable with respect to the angle between the head and the motor.
openaire +1 more source
Self-Aligned Nanotube–Nanowire Phase Change Memory
Nano Letters, 2013A central issue of nanoelectronics concerns their fundamental scaling limits, that is, the smallest and most energy-efficient devices that can function reliably. Unlike charge-based electronics that are prone to leakage at nanoscale dimensions, memory devices based on phase change materials (PCMs) are more scalable, storing digital information as the ...
Feng Xiong +8 more
openaire +3 more sources
1974
Abstract : This report presents the results of a study on platform self- alignment performed at the Guidance and Control Directorate, US Army Missile Research, Development and Engineering Laboratory, Redstone Arsenal, Alabama. The study was initiated to explore the latest techniques in platform self- alignment and to develop new and novel approaches ...
H. V. White, J. C. Hung
openaire +1 more source
Abstract : This report presents the results of a study on platform self- alignment performed at the Guidance and Control Directorate, US Army Missile Research, Development and Engineering Laboratory, Redstone Arsenal, Alabama. The study was initiated to explore the latest techniques in platform self- alignment and to develop new and novel approaches ...
H. V. White, J. C. Hung
openaire +1 more source
A Self-Aligning Flip-Chip Assembly Method Using Sacrificial Positive Self-Alignment Structures
IEEE Transactions on Components, Packaging and Manufacturing Technology, 2016A self-aligning flip-chip assembly method is described. The method is capable of correcting up to 150 $\mu \text{m}$ (five times the radius of solder balls used) of initial misalignment during flip-chip assembly. Critical components of the self-alignment are four polymeric positive self-alignment structures (PSASs), which are fabricated on a ...
Hyung Suk Yang +2 more
openaire +1 more source
Self-alignment trench-pole writer
IEEE Transactions on Magnetics, 1999We have succeeded in designing, fabricating, and testing self-alignment trench-pole write heads. 1 /spl mu/m narrow track heads were fabricated by a newly developed self-alignment trench process and showed large overwrite of over 40 dB for low-noise high coercivity media with Hc=2800 Oe, even with a large throat height of 3 /spl mu/m.
H. Yoda +5 more
openaire +1 more source
Self-aligned dual surface lithography
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1986A new class of microstructures, such as the opposed gate–source transistor, requires the careful alignment of submicron features on two opposite surfaces of a substrate. Concepts for self-aligned methods for accomplishing dual-surface lithography have been explored for the first time. Self-alignment is based on the integration of the exposure mask into
J. P. Krusius, J. Nulman, A. Perera
openaire +1 more source
Self-Aligned AlGaN/GaN FinFETs
IEEE Electron Device Letters, 2017We have demonstrated highly scaled, self-aligned AlGaN/GaN fin-shaped field-effect transistors (FinFETs), which were fabricated using e-beam lithography and a regrown n+ GaN ohmic process with a sacrificial dummy gate. Our devices were very aggressively scaled, with fin widths, gate length, and source drain spacing as small as 50, 60, and 200nm ...
David F. Brown +4 more
openaire +1 more source
Studies on solder self-alignment
Proceedings of LEOS'94, 2002Solder technologies are being used for precision-aligned optoelectronic assemblies. Two representative configurations for such assemblies are shown in this paper. In the first the assembly's component well is aligned to the substrate by the solder surface tension force.
openaire +1 more source