Results 121 to 130 of about 119,441 (244)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Contaminant Removal from Nature's Self-Cleaning Surfaces. [PDF]

open access: yesNano Lett, 2023
Perumanath S, Pillai R, Borg MK.
europepmc   +1 more source

Fluorine‐Free Soft Nanocomposites for High‐Speed Liquid Impact Repellence

open access: yesAdvanced Functional Materials, EarlyView.
Fluorine‐free soft nanocomposite coatings are developed using silicone oil‐mediated mechanical‐stiffness control, enabling ‘dry’ liquid‐repellent surfaces that resist high‐speed water jet impacts up to ∼60 m/s. By tuning nanoparticle loading and oil content, the coatings also achieve >90% optical transparency, amphiphobicity with impact resistance to ...
Priya Mandal   +4 more
wiley   +1 more source

Unraveling Quantitative Sensing Mechanism and Predictive Molecular Metrics for High‐Performance OFET Amine Sensors

open access: yesAdvanced Functional Materials, EarlyView.
This study introduces a novel chloro boron subphthalocyanine/polymer blend OFET sensor achieving 0.005 ppb limit of detection for ammonia at room temperature and high selectivity against similar amines. An original theoretical framework is proposed to describe the sensing mechanism, relating analyte molecular volume and Lewis basicity to sensor ...
Kavinraaj Ella Elangovan   +6 more
wiley   +1 more source

Temperature‐Induced Nonvolatile Switching through Thermal Hysteresis in a Gd3Fe5O12/Ho3Fe5O12 Exchange‐Coupled Rare‐Earth Iron Garnet Bilayer

open access: yesAdvanced Functional Materials, EarlyView.
Reducing power consumption in spintronic memory remains a major challenge due to the need for high current densities. A bilayer of gadolinium and holmium iron garnets enables purely temperature‐induced, nonvolatile magnetic switching with bistable states within a ±25 K range. This approach achieves up to 66‐fold lower energy use than current spin–orbit
Junseok Kim   +3 more
wiley   +1 more source

Overcoming Debye Length Limitations in Electrolyte‐Gated Transistor Biosensors Using Nanoscale‐Grooved Oxide Semiconductors Fabricated by Thermal Nanoimprint Lithography

open access: yesAdvanced Functional Materials, EarlyView.
Nanoscale‐grooved indium gallium oxide (IGO) semiconductors, patterned via thermal nanoimprint lithography (NIL) using CD/DVD templates, are integrated into electrolyte‐gated transistor biosensors to overcome Debye length limitations. Precisely engineered concave–convex nanostructures modulate local electrostatic potentials, extend the effective Debye ...
Jong Yu Song   +5 more
wiley   +1 more source

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