Results 161 to 170 of about 1,920 (223)

Logic Functionality and Circuit Design of In2Se3‐Based Split‐Gate Ferroelectric Field‐Effect Transistor for Zero‐Trust Applications

open access: yesAdvanced Electronic Materials, EarlyView.
ABSTRACT Van der Waals ferroelectric materials are emerging as key building blocks for future logic devices and integrated circuits. Among them, α‐In2Se3 offers a unique combination of robust room temperature ferroelectricity and semiconducting behavior.
Ankita Ram   +10 more
wiley   +1 more source

Nonmonotonic Enhancement of Electro‐Optic Properties of Wurtzite AlN Thin Films by Sc Doping

open access: yesAdvanced Electronic Materials, EarlyView.
EO coefficient, rc, for Sc‐AlN thin films in comparison with that for Mg ZnO thin films (left). Calculated electric field intensity of the fundamental mode supported by the active area that includes Sc‐AlN (right). ABSTRACT Wurtzite ferroelectrics, such as Sc‐doped AlN, have recently attracted considerable attention for their potential in realizing ...
K. Abe   +11 more
wiley   +1 more source

Foundation model-guided multi-view semi-supervised CT segmentation of liver tumors in resource-constrained settings. [PDF]

open access: yesNPJ Digit Med
Jiang Y   +18 more
europepmc   +1 more source

Scan‐Path‐ and Initial‐State‐Dependent Superdomain Switching in (111)‐Oriented PZT

open access: yesAdvanced Electronic Materials, EarlyView.
Scan trajectory and initial superdomain topology govern polarization switching in (111)‐oriented PZT. Automated AFM writing, pulsing experiments, and interferometric 3D‐PFM show that raster scans reproducibly stabilize ordered Type‐I stripe superdomains with constrained variant selection, whereas spiral trajectories generate frustrated mixed‐variant ...
Rama Vasudevan   +11 more
wiley   +1 more source

Linear and Programmable Long‐Term Plasticity in PECVD Amorphous SiC Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
Stoichiometry‐engineered PECVD amorphous SiC memristors exhibit highly linear and programmable long‐term synaptic plasticity with a nonlinearity as low as 0.08. By controlling the local bonding environment, stable multilevel conductance updates are achieved, enabling robust neural‐network classification on MNIST and CIFAR‐10 and highlighting amorphous ...
Qin Liu   +6 more
wiley   +1 more source

Pulse‐Engineered Synaptic Linearity and Non‐Volatile Memory in MoO3/TiO2 Bilayer Memristors for Neuromorphic Image Recognition

open access: yesAdvanced Electronic Materials, EarlyView.
Pulse‐protocol optimization in an Au/MoO3/TiO2/FTO bilayer memristor enables linear analog synaptic conductance modulation along with digital resistive switching for memory. Controlled filament evolution produces stable learning‐forgetting characteristics with low nonlinearity, resulting in significantly enhanced neural network inference accuracy for ...
Girish Chandrashekar   +2 more
wiley   +1 more source

Cortical dynamics of neural-connectivity fields. [PDF]

open access: yesJ Comput Neurosci
Cooray GK, Cooray V, Friston KJ.
europepmc   +1 more source

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