Results 151 to 160 of about 947,691 (350)
Advanced Functional Materials, EarlyView.This study uncovers a new switching mechanism in HfO2 and ZrO2, where the absence of a non‐polar layer along the a‐direction induces interaction between polar layers. Consequently, the switching barriers for growth are lower than those for nucleation in this direction, leading to a size‐dependent coercive field that matches experimental observations ...
Kun Hee Ye +6 more
wiley +1 more source
Oriented Growth of Semiconductors. V. Surface Features and Twins in Epitaxial Gallium Arsenide [PDF]
, 1967 H. Holloway, L. C. Bobb
openalex +1 more source
A Novel Approach to Implementing Artificial Thalamic Neurons with Ferroelectric Transistors
Advanced Functional Materials, EarlyView.Artificial neurons created using CMOS technology often require a large number of transistors and capacitors. This study introduces an artificial thalamic neuron that employs only five CMOS compatible ferroelectric transistors. The manufactured thalamic neuron demonstrates leaky integrate‐and‐fire‐or‐burst (LIFB) functionalities, featuring self ...
Andreas Grenmyr +7 more
wiley +1 more source
Orbital: The Electronic Journal of Chemistry, 2019 This work has investigated the effect of different dopants on structure, morphology and optical property of ZnWO4. Rare-earth doped ZnWO4 (ZnWO4:RE, with 0.5, 1, and 2 mol% of Eu3+ and Pr3+) were successfully synthesized by coprecipitation method ...
Kellen Cristina Mesquita Borges +6 more
doaj
Activation analysis of impurities in silicon for semiconductor material
, 1959 Toshio Nakai +3 more
openalex +2 more sources
Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Advanced Functional Materials, EarlyView.Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai +8 more
wiley +1 more source
The Application of Gas Chromatography to the Analysis of Gas/Vapor Atmospheres in Semiconductor Processes [PDF]
, 1966 R. T. Nuttall
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Compositing Effect Leads to Extraordinary Performance in GeSe‐Based Thermoelectrics
Advanced Functional Materials, EarlyView.Rhombohedral GeSe is rationally designed with (GeSe)0.9(AgBiTe2)0.1‐1.5 mol.% SnSe, achieving a peak ZT of 1.31 at 623 K. Forming a composite with SnSe establishes interfaces with strong phonon scattering and weak electron scattering. Multiscale defects lead to an ultra‐low lattice thermal conductivity (0.26 W m−1 K−1), approaching the amorphous limit.
Min Zhang +14 more
wiley +1 more source