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Fundamentals of zinc oxide as a semiconductor
, 2009A. Janotti, C. G. Van de Walle
semanticscholar +1 more source
1996
This chapter deals with laser-induced etching of element and compound semiconductors. An inspection of Appendix B.3 shows that the most detailed investigations on dry-etching have been performed for Si, GaAs, and InP. The precursor molecules mainly employed include halides and halogen compounds such as Cl2, HCl, XeF2, NF3, CCl4, CF3Br, CF3I, and SF6 ...
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This chapter deals with laser-induced etching of element and compound semiconductors. An inspection of Appendix B.3 shows that the most detailed investigations on dry-etching have been performed for Si, GaAs, and InP. The precursor molecules mainly employed include halides and halogen compounds such as Cl2, HCl, XeF2, NF3, CCl4, CF3Br, CF3I, and SF6 ...
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Strategies for Semiconductor/Electrocatalyst Coupling toward Solar‐Driven Water Splitting
Advanced Science, 2020Sitaramanjaneya Mouli Thalluri +2 more
exaly