Results 211 to 220 of about 63,467 (302)

When Poor Exciton Dissociation Limits Photocurrents in Organic Solar Cells: Why Low Offset Non‐Fullerene Acceptor Blends Can't Be Efficient

open access: yesAdvanced Materials, EarlyView.
The energetic offset between the donor and the acceptor components in organic photoactive layers is central to the tradeoff between photovoltage and photocurrent losses. This Perspective covers the most important issues surrounding this topic in non‐fullerene acceptor blends, from the difficulty of accurately determining state energies and driving ...
Dieter Neher, Manasi Pranav
wiley   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

open access: yesAdvanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger   +14 more
wiley   +1 more source

Droplet Electricity Generators With Maximized Energy Collection Zone Enabled by Aloe‐Inspired Midrib and Cuticle

open access: yesAdvanced Materials, EarlyView.
An Aloe‐pinspired droplet electricity generator (A‐DEG) overcomes the limited energy collection zone of conventional DEGs by guiding impact droplets through a channeling midrib and artificial cuticle. The channeling midrib induces uni‐directional droplet spreading, while the artificial cuticle on the midrib further reinforces this behavior through its ...
Gibeom Lee   +8 more
wiley   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

open access: yesAdvanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova   +10 more
wiley   +1 more source

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