Results 1 to 10 of about 322,683 (317)

Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage

IEEE Journal of the Electron Devices Society, 2021
Etched-and-regrown GaN pn-diodes capable of high breakdown voltage (1610 V), low reverse current leakage (1 nA = 6 μA/cm2 at 1250 V), excellent forward characteristics (ideality factor 1.6), and low specific on-resistance (1.1 mΩ.cm2) were ...
Andrew M. Armstrong, Andrew A. Allerman, Greg W. Pickrell, Mary H. Crawford, Caleb E. Glaser, Trevor Smith   +5 more
doaj   +1 more source

Effect of Stochastic Resonance on Classification Accuracy of Neural Networks Utilizing Inherent Stochasticity in Threshold Voltage of Ovonic Threshold Switching Device

IEEE Journal of the Electron Devices Society, 2022
In this study, stochastic resonance (SR) exploits the inherent stochastic characteristics of the OTS threshold voltage to enhance the inference performance of neural networks.
Wooseok Choi, Myonghoon Kwak, Donguk Lee, Sangmin Lee, Chuljun Lee, Seyoung Kim, Hyunsang Hwang   +6 more
doaj   +1 more source

An Intrinsic Small-Signal Equivalent Circuit Model for AlGaN/GaN HEMT Considering the Momentum Balance Equation

IEEE Journal of the Electron Devices Society, 2021
High-frequency dispersion of the AlGaN/GaN HEMT output resistance has been investigated. Using the electron momentum balance equation, we demonstrated that the deviation of the dynamic drift velocity from its static value could be considered as the main ...
Y. Pei, Amgad A. Al-Saman, Chengong Yin, Eugeny A. Ryndin, Fujiang Lin   +4 more
doaj   +1 more source

Unipolar Arc Ignited Partial Discharge for 650-V AlGaN/GaN HEMTs during the DC Breakdown Voltage Measurement

Energies, 2022
Without the Fluorinert solution and proper pad design, the high–voltage (HV) transistor used during the DC breakdown voltage (Vbk) measurement might be damaged by the partial discharge (PD) in the air if its Vbk is close to one thousand volts or more ...
Jian-Hsing Lee, Chih-Cherng Liao, Yeh-Jen Huang, Ching-Ho Li, Li-Yang Hong, Yeh-Ning Jou, Ke-Horng Chen   +6 more
doaj   +1 more source

Anisotropic Strain Relaxation in Semipolar $\left(11\overline{2}2\right)$ InGaN/GaN Superlattice Relaxed Templates

Nanomaterials, 2022
Semipolar (112¯2) InGaN/GaN superlattice templates with different periodical InGaN layer thicknesses were grown on m-plane sapphire substrates using metal-organic chemical vapor deposition (MOCVD).
Wenlong Li, Lianshan Wang, Ruohao Chai, Ling Wen, Zhen Wang, Wangguo Guo, Huanhua Wang, Shaoyan Yang   +7 more
doaj   +1 more source

Effects of Forming Gas Annealing and Channel Dimensions on the Electrical Characteristics of FeFETs and CMOS Inverter

IEEE Journal of the Electron Devices Society, 2020
In this study, ferroelectric FETs (FeFETs) and CMOS inverters are fabricated and analyzed, exhibiting 13% of 593 devices with sub-60 mV subthreshold swing (SS) at room temperature. Forming gas annealing (FGA) is found to not only enhance ferroelectricity
Po-Jung Sung, Chun-Jung Su, Shih-Hsuan Lo, Fu-Kuo Hsueh, Darsen D. Lu, Yao-Jen Lee, Tien-Sheng Chao   +6 more
doaj   +1 more source

Peanut Defect Identification Based on Multispectral Image and Deep Learning

Agronomy, 2023
To achieve the non-destructive detection of peanut defects, a multi-target identification method based on the multispectral system and improved Faster RCNN is proposed in this paper.
Yang Wang, Zhao Ding, Jiayong Song, Zhizhu Ge, Ziqing Deng, Zijie Liu, Jihong Wang, Lifeng Bian, Chen Yang   +8 more
doaj   +1 more source

Linear Frequency Modulation of NbO2-Based Nanoscale Oscillator With Li-Based Electrochemical Random Access Memory for Compact Coupled Oscillatory Neural Network

Frontiers in Neuroscience, 2022
Oscillatory neural network (ONN)-based classification of clustered data relies on frequency synchronization to injected signals representing input data, showing a more efficient structure than a conventional deep neural network.
Donguk Lee, Myonghoon Kwak, Jongwon Lee, Jiyong Woo, Hyunsang Hwang   +4 more
doaj   +1 more source

Switching Performance of a 3.3-kV SiC Hybrid Power Module for Railcar Converters

IEEE Access, 2020
The unique properties of a SiC hybrid 3.3-kV/450-A half-bridge IGBT power module which is designed for enhanced reliability of railcar converters are presented in this paper.
Xiang Li, Daohui Li, Guiqin Chang, Matthew Packwood, Daniel Pottage, Arthur Su, Yangang Wang, Haihui Luo, Guoyou Liu   +8 more
doaj   +1 more source

Semiconductor devices and methods [PDF]

, 2004
A method of forming a semiconductor device includes the following steps: providing a plurality of semiconductor layers; providing means for coupling signals to and/or from layers of the device; providing a quantum well disposed between adjacent layers of
Dupuis, Russell D., Holonyak, Nick, Jr.
core   +1 more source