Results 101 to 110 of about 5,352,312 (303)

Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device. [PDF]

Sci Rep, 2023
Lee G, Lee Y, Kim S, Kim D, Park H, Woo M, Song T, Paik U.   +7 more
europepmc   +1 more source

MOSFET analog memory circuit achieves long duration signal storage [PDF]

, 1966
Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches ...

core   +1 more source

Selection Strategies for Flexible Pressure Sensor Electrode Materials Toward Ultrafast Response

Advanced Functional Materials, EarlyView.
This study reveals, for the first time, how the electrode–organic interface governs the temporal performance of flexible pressure sensors. By pairing high‐conductivity CVD PEDOT with commonly used metal electrodes, the authors demonstrate that interfacial energy alignment dictates microsecond‐scale response, providing a straightforward design strategy ...
Jinwook Baek, Yuxuan Zhang, Hyeondong Yang, Minyoung Kim, Pavlos P. Vlachos, Jeongok Choe, Bo‐Gyu Bok, Kejie Zhao, Han‐Wook Song, Min‐Seok Kim, Martin Byung‐Guk Jun, Sunghwan Lee   +11 more
wiley   +1 more source

Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction

, 2004
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular 1.5 x 0.3 um^2
D. Chiba, F. Matsukura, F. Matsukura, H. Ohno, K. Hamaya, M. Julliere, N. F. Mott, T. Kita, T. Miyazaki, Y. Sato, Z. Li   +10 more
core   +1 more source

Structure–Transport–Ion Retention Coupling for Enhanced Nonvolatile Artificial Synapses

Advanced Functional Materials, EarlyView.
Nitrogen incorporation into the conjugated backbone of donor–acceptor polymers enables efficient charge transfer and deep ion embedding in organic electrochemical synaptic transistors (OESTs). This molecular‐level design enhances non‐volatile synaptic properties, providing a new strategy for developing high‐performance and reliable neuromorphic devices.
Donghwa Lee, Jinsung Kim, Sein Chung, Junho Sung, Chaeyeon Han, Eunho Lee   +5 more
wiley   +1 more source

Vertical‐Switching Conductive Bridge Random Access Memory with Adjustable Tunnel Gap and Improved Switching Uniformity Using 2D Electron Gas

Advanced Electronic Materials
Owing to the high reactivity and diffusivity of Ag and Cu ions, controlling the atomic filament formation and rupture processes in conductive bridge random‐access memory (CBRAM) is challenging.
Jiho Kim, Ohhyuk Kwon, Jongseon Seo, Hyunsang Hwang   +3 more
doaj   +1 more source

MOS field-effect-transistor technology [PDF]

Metal oxide semiconductor field effect transistor circuit development and laminated electronic packaging for computer storage ...
Boesenberg, W. A., Flatley, D., Parker, H., Ross, E. C., Wallmark, J. T.   +4 more
core   +1 more source

Method of making a silicon semiconductor device Patent [PDF]

, 1967
Doping silicon material with gadolinium to increase radiation resistance of solar ...
Mandelkorn, J.
core   +1 more source

Spin-current diode with a ferromagnetic semiconductor

, 2015
Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias.
Sun, Qing-Feng, Xie, X. C.
core   +1 more source

Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors

Advanced Functional Materials, EarlyView.
π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato, Soh Kushida, Nafees Umar Draz, Dan Kyotani, Emanuel Smarsly, Kyota Yoshinaga, Wenhao He, Uwe H. F. Bunz, Kazuhiro Marumoto, Tatsuya Mori, Yohei Yamamoto   +10 more
wiley   +1 more source