Results 261 to 270 of about 5,352,312 (303)

Acceleration of Semiconductor Device Simulation With Approximate Solutions Predicted by Trained Neural Networks

IEEE Transactions on Electron Devices, 2021
In order to accelerate the semiconductor device simulation, we propose to use a neural network to learn an approximate solution for desired bias conditions.
Seung-Cheol Han, J. Choi, Sung-Min Hong
semanticscholar   +1 more source

Halide Perovskite Semiconductor Lasers: Materials, Cavity Design, and Low Threshold.

Nano letters (Print), 2021
Solution-processable semiconductor lasers have been a long-standing challenge for next-generation displays, light sources, and communication technologies.
Qing Zhang, Qiuyu Shang, Rui Su, T. T. Do, Q. Xiong   +4 more
semanticscholar   +1 more source

TCAD Augmented Machine Learning for Semiconductor Device Failure Troubleshooting and Reverse Engineering

International Conference on Simulation of Semiconductor Processes and Devices, 2019
In this paper, we show the possibility of using Technology Computer Aided Design (TCAD) to assist machine learning for semiconductor device failure trouble shooting and device reverse engineering.
Y. S. Bankapalli, H. Wong
semanticscholar   +1 more source

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor‐Structure Devices

Advances in Materials, 2021
Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which revolutionary innovations are needed to address fundamental limitations on material and working principle level.
Zheng‐Dong Luo, Ming-Min Yang, Yang Liu, M. Alexe   +3 more
semanticscholar   +1 more source

Ferroelectric Transistors for Memory and Neuromorphic Device Applications

Advances in Materials, 2022
Ferroelectric materials have been intensively investigated for high‐performance nonvolatile memory devices in the past decades, owing to their nonvolatile polarization characteristics.
Ik-Jyae Kim, Jang-Sik Lee
semanticscholar   +1 more source

A ferroelectric semiconductor field-effect transistor

Nature Electronics, 2018
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device.
M. Si, A. Saha, Shengjie Gao, G. Qiu, J. Qin, Yuqin Duan, J. Jian, Chang Niu, Haiyan Wang, Wenzhuo Wu, S. Gupta, P. Ye   +11 more
semanticscholar   +1 more source

Radiation damage effects on zinc oxide (ZnO) based semiconductor devices– a review

Radiation Physics and Chemistry, 2021
In space, semiconductor devices are vulnerable to various effect of high energy radiation, causing single event upsets (SEUs), damaging or altering the lattice structure of the semiconductor device.
Rosfayanti Rasmidi, M. Duinong, F. Chee
semanticscholar   +1 more source

A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices

IEEE transactions on power electronics, 2020
Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and high power density to power converters due to their excellent performance.
Jian Chen, Xiong Du, Quanming Luo, Xinyue Zhang, Pengju Sun, Lin Zhou   +5 more
semanticscholar   +1 more source

Synergistic Improvement of Long‐Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia‐Based Oxide‐Semiconductor Transistors

Advances in Materials, 2020
A number of synapse devices have been intensively studied for the neuromorphic system which is the next‐generation energy‐efficient computing method. Among these various types of synapse devices, photonic synapse devices recently attracted significant ...
Min-Kyu Kim, Jang‐Sik Lee
semanticscholar   +1 more source