Results 261 to 270 of about 322,683 (317)

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

Advanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki, In Cheol Kwak, Seonkwon Kim, Jihyun Kim, Dong Gue Roe, Se‐Jin Kim, Joohoon Kang, Jeong Ho Cho   +7 more
wiley   +1 more source

Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors. [PDF]

Nat Commun
Li E, He W, Wang R, Zhang C, Zhou H, Liu Y, Yuan Y, Loh KP, Chu J, Li W.   +9 more
europepmc   +1 more source

Mesoporous Carbon Thin Films with Large Mesopores as Model Material for Electrochemical Applications

Advanced Functional Materials, EarlyView.
Mesoporous carbon thin films possessing 70 nm mesopores are prepared on titanium substrates by soft templating of resol resins with a self‐synthesized poly(ethylene oxide)‐block‐poly(hexyl acrylate) block copolymer. A strategy to avoid corrosion of the metal substrate is presented, and the films are extensively characterized in terms of morphology ...
Lysander Q. Wagner, Joshua Schober, Pascal Dippell, Chantal Glatthaar, Smail Mekhilef, David Schäfer, Hannes Hergert, Marcus Rohnke, Matthias T. Elm, Bernd M. Smarsly   +9 more
wiley   +1 more source

Highly Photosensitive Colloidal Quantum Well Based Nanocrystal Skins Assisted by Orientation Control. [PDF]

Nano Lett
Isik F, Bozkaya T, Bozkaya I, Delikanli S, Canimkurbey B, Demir HV.   +5 more
europepmc   +1 more source

Selection Strategies for Flexible Pressure Sensor Electrode Materials Toward Ultrafast Response

Advanced Functional Materials, EarlyView.
This study reveals, for the first time, how the electrode–organic interface governs the temporal performance of flexible pressure sensors. By pairing high‐conductivity CVD PEDOT with commonly used metal electrodes, the authors demonstrate that interfacial energy alignment dictates microsecond‐scale response, providing a straightforward design strategy ...
Jinwook Baek, Yuxuan Zhang, Hyeondong Yang, Minyoung Kim, Pavlos P. Vlachos, Jeongok Choe, Bo‐Gyu Bok, Kejie Zhao, Han‐Wook Song, Min‐Seok Kim, Martin Byung‐Guk Jun, Sunghwan Lee   +11 more
wiley   +1 more source

Tuning the Air Stability of N-Type Semiconductors via Poly(2-vinylpyridine): The Importance of Humidity and Molecular Weight. [PDF]

Small Sci
Dickson LE, DiPalo VA, Plint T, Udaya Mohanan K, Manion JG, Kim CH, Lessard BH.   +6 more
europepmc   +1 more source

Investigation and suppression of semiconductor–oxide related defect states : from surface science to device tests

, 2019
Jaakko Mäkelä
openalex   +1 more source

Dual‐Interface Engineering of the Source Electrode to Overcome the Intrinsic Injection‐Leakage Trade‐Off in Organic Schottky Barrier Transistors

Advanced Functional Materials, EarlyView.
A charge injection layer is introduced via RIE to decouple the dual functions of the source electrode: lowering contact resistance through doping to enhance charge injection, while SAM modification on the top surface minimizes leakage current. This strategy enables OSBTs to achieve a high on/off ratio with improved stability and performance.
Hye Ryun Sim, Sangjun Lee, Geon‐Hee Nam, Jieun Kwon, Junseo Kim, Syed Zahid Hassan, Dae Sung Chung   +6 more
wiley   +1 more source

Two-dimensional magnetic tunnel p-n junctions for low-power electronics. [PDF]

Nat Commun
Zhu W, Wang Z, Hu T, Kudrynskyi ZR, Zhou T, Kovalyuk ZD, Hu C, Lin H, Li X, Deng Y, Lv Q, Zhao L, Patanè A, Žutić I, Zheng H, Wang K.   +15 more
europepmc   +1 more source

Intermixing‐Driven Growth of Highly Oriented Indium Phosphide on Black Phosphorus

Advanced Functional Materials, EarlyView.
This study demonstrates controlled intermixing and compound formation at the In/black phosphorus (BP) interface, leading to highly oriented InP formation. Comprehensive structural and electrical analyses reveal tunable bandgap behavior governed by competing BP thinning and charge‐transfer effects, underscoring the critical role of interfacial compound ...
Tae Keun Yun, Min Gyeong Shin, Uje Choi, Jieun Yeon, Jae Joon Kim, Yangjin Lee, Kwanpyo Kim   +6 more
wiley   +1 more source