Results 31 to 40 of about 5,352,312 (303)

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Scientific Reports, 2022
Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line (BEOL) CMOS process; they are promising devices creating new and various ...
Donguk Kim, Je-Hyuk Kim, Woo Sik Choi, Tae Jun Yang, Jun Tae Jang, Attilio Belmonte, Nouredine Rassoul, Subhali Subhechha, Romain Delhougne, Gouri Sankar Kar, Wonsok Lee, Min Hee Cho, Daewon Ha, Dae Hwan Kim   +13 more
doaj   +1 more source

Surface evolution of native silicon oxide layer and its effects on the growth of self-assisted VLS GaAs nanowires

AIP Advances, 2019
This research focuses on the impact of native SiO2 layer evolution, occurring on the surfaces of Si(111) substrates on the morphological and structural properties of self-assisted GaAs nanowires.
Samatcha Vorathamrong, Somsak Panyakeow, Somchai Ratanathammaphan, Piyasan Praserthdam   +3 more
doaj   +1 more source

A finite element method to simulate dislocation stress: A general numerical solution for inclusion problems

AIP Advances, 2020
We developed a simple and efficient way to simulate stress from arbitrary shape dislocations within the finite element method (FEM) framework. The new method is implemented as a single-step FEM simulation using analytic solutions in an infinite medium as
Chihak Ahn, Yutaka Nishizawa, Woosung Choi   +2 more
doaj   +1 more source

Electron Spin Injection at a Schottky Contact

, 2002
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor.
A.F. Isakovic, A.G. Aronov, A.T. Hanbicki, B.T. Jonker, D. L. Smith, D.L. Smith, E.I. Rashba, G. Schmidt, H.J. Zhu, I. Malajovich, J. D. Albrecht, R. Fiederling, S.A. Wolf, Y. Qi   +13 more
core   +1 more source

Majorana fermions in a tunable semiconductor device [PDF]

, 2009
The experimental realization of Majorana fermions presents an important problem due to their non-Abelian nature and potential exploitation for topological quantum computation. Very recently Sau et al. [Phys. Rev. Lett.
J. Alicea
semanticscholar   +1 more source

Mechanochemical Synthesis and Characterization of Nanostructured ErB4 and NdB4 Rare‐Earth Tetraborides

Advanced Engineering Materials, Volume 27, Issue 6, March 2025.
ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur, Faruk Kaya, Bora Derin, Mustafa Lütfi Öveçoğlu, Ju Li, Duygu Ağaoğulları   +5 more
wiley   +1 more source

Ultraflexible and transparent electroluminescent skin for real-time and super-resolution imaging of pressure distribution

Nature Communications, 2020
Electronic skin that spatially maps pressure distribution through imaging shows limited performance despite improvements to data acquisition. Here, the authors report ultraflexible, transparent electroluminescent skin capable of high-resolution imaging ...
Byeongmoon Lee, Ji-Young Oh, Hyeon Cho, Chul Woong Joo, Hyungsoo Yoon, Sujin Jeong, Eunho Oh, Junghwan Byun, Hanul Kim, Seunghwan Lee, Jiseok Seo, Chan Woo Park, Sukyung Choi, Nae-Man Park, Seung-Youl Kang, Chi-Sun Hwang, Seong-Deok Ahn, Jeong-Ik Lee, Yongtaek Hong   +18 more
doaj   +1 more source

Piezoresistive Monitoring of Carbon Nanomaterial‐Reinforced Epoxy Composites Under Cyclic and Fatigue Loading: A Review

Advanced Engineering Materials, EarlyView.
Carbon nanomaterial‐reinforced epoxy composites exhibit pronounced piezoresistive behavior, enabling intrinsic damage sensing under cyclic and fatigue loading. This review critically compares carbon nanotube and graphene systems, correlating filler content, percolation threshold, and gauge factor with sensing stability and damage evolution.
J. M. Parente, J. Nunes‐Pereira, A. P. Silva, P. N. B. Reis   +3 more
wiley   +1 more source

Sub-Kelvin resistance thermometer [PDF]

, 1992
A device capable of accurate temperature measurement down to 0.01 K of a particular object is discussed. The device is comprised of the following: a heat sink wafer; a first conducting pad bonded near one end of the heat sink wafer; a second conducting ...
Castles, Stephen H.
core   +1 more source

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Materials Research Express, 2020
Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
N. Al-Ahmadi
semanticscholar   +1 more source