Results 41 to 50 of about 322,683 (317)

Organic Electrochemical Transistor Channel Materials: Copolymerization Versus Physical Mixing of Glycolated and Alkoxylated Polymers

Advanced Functional Materials, EarlyView.
This work discusses the use of blended channel materials in OECTs. It explores how mixing glycolated and alkoxylated polymers in various ratios offers a simpler and more efficient route to tuning OECT properties. The performance of the polymer blends is compared to the corresponding copolymers, demonstrating similar OECT characteristics, swelling ...
Lize Bynens, Kaishuai Zhang, Priscila Cavassin, Arwin Goossens, Jochen Vanderspikken, Tania C. H. Castillo, Demetra Tsokkou, Adam Marks, Arianna Magni, Karrie Weaver, Laurence Lutsen, Sahika Inal, Koen Vandewal, Natalie Banerji, Wouter Maes   +14 more
wiley   +1 more source

Apparatus for measuring semiconductor device resistance [PDF]

, 1980
A test structure is described for enabling the accurate measurement of the resistance characteristics of a semiconductor material and includes one or more pairs of electrical terminals disposed on the surface of the material to enable measurements of the
Matzen, W. J.
core   +1 more source

Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit [PDF]

, 1982
A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal-semiconductor field-effect transistor on a semi-insulating substrate.
Bar-Chaim, Nadav, Lau, Kam Y., Ury, Israel, Yariv, Amnon   +3 more
core   +1 more source

Advancing Electronic Application of Coordination Solids: Enhancing Electron Transport and Device Integration via Surface‐Mounted MOFs (SURMOFs)

Advanced Functional Materials, EarlyView.
The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu, Christof Wöll, Stefan Bräse   +2 more
wiley   +1 more source

Characterization of the in-situ degradation process of P3HT:PCBM based on hyperspectral and neural networks

Polymer Testing
In situ online observation of surface morphology during degradation processes is of paramount importance for exploring the stability of organic photovoltaic materials.
Yang Wang, Zhao Ding, Junli Li, Ting Yang, Jianfeng Chen, Lifeng Bian, Chen Yang   +6 more
doaj   +1 more source

Vacuum gap atomic switch with improved controllability of quantized conduction states and low transition energy

AIP Advances, 2023
To maximize the multilevel data storage capability for high-density memory applications, precise control of quantized conduction with ultralow transition energy is required.
Sunhyeong Lee, Seungwoo Lee, Hyunsang Hwang   +2 more
doaj   +1 more source

Macroscopic quantum state in a semiconductor device

, 2010
We show how nanostructuring of a metallic gate on a field-effect transistor (FET) can lead to a macroscopic, robust and voltage controlled quantum state in the electron channel of a FET.
Hawrylak, Pawel, Hsieh, Chang-Yu, Sharma, Anand, Shim, Yun-Pil   +3 more
core   +1 more source

Ab Initio Study on 3D Anisotropic Ferroelectric Switching Mechanism and Coercive Field in HfO2 and ZrO2

Advanced Functional Materials, EarlyView.
This study uncovers a new switching mechanism in HfO2 and ZrO2, where the absence of a non‐polar layer along the a‐direction induces interaction between polar layers. Consequently, the switching barriers for growth are lower than those for nucleation in this direction, leading to a size‐dependent coercive field that matches experimental observations ...
Kun Hee Ye, Taeyoung Jeong, Seungjae Yoon, Dohyun Kim, Yunjae Kim, Cheol Seong Hwang, Jung‐Hae Choi   +6 more
wiley   +1 more source

System for etching thick aluminum layers minimizes bridging and undercutting [PDF]

, 1966
Four step photoresist process for etching thick aluminum layers for semiconductor device contacts produces uniform contact surfaces, eliminates bridging, minimizes undercutting, and may be used on various materials of any ...

core   +1 more source

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, EarlyView.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source