Results 51 to 60 of about 5,352,312 (303)

Apparatus for measuring semiconductor device resistance [PDF]

, 1980
A test structure is described for enabling the accurate measurement of the resistance characteristics of a semiconductor material and includes one or more pairs of electrical terminals disposed on the surface of the material to enable measurements of the
Matzen, W. J.
core   +1 more source

Advancing Electronic Application of Coordination Solids: Enhancing Electron Transport and Device Integration via Surface‐Mounted MOFs (SURMOFs)

Advanced Functional Materials, EarlyView.
The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu, Christof Wöll, Stefan Bräse   +2 more
wiley   +1 more source

Ferroelectric materials for neuromorphic computing

APL Materials, 2019
Ferroelectric materials are promising candidates for synaptic weight elements in neural network hardware because of their nonvolatile multilevel memory effect.
S. Oh, H. Hwang, I. K. Yoo
doaj   +1 more source

Schottky barrier solar cell promises improved efficiency [PDF]

, 1975
Higher current and higher voltage can be obtained by using Schottky barrier device with wide band-gap semiconductor as top layer and lower band-gap semiconductor underneath.
Stirn, R. J.
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Characterization of the in-situ degradation process of P3HT:PCBM based on hyperspectral and neural networks

Polymer Testing
In situ online observation of surface morphology during degradation processes is of paramount importance for exploring the stability of organic photovoltaic materials.
Yang Wang, Zhao Ding, Junli Li, Ting Yang, Jianfeng Chen, Lifeng Bian, Chen Yang   +6 more
doaj   +1 more source

Vacuum gap atomic switch with improved controllability of quantized conduction states and low transition energy

AIP Advances, 2023
To maximize the multilevel data storage capability for high-density memory applications, precise control of quantized conduction with ultralow transition energy is required.
Sunhyeong Lee, Seungwoo Lee, Hyunsang Hwang   +2 more
doaj   +1 more source

Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit [PDF]

, 1982
A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal-semiconductor field-effect transistor on a semi-insulating substrate.
Bar-Chaim, Nadav, Lau, Kam Y., Ury, Israel, Yariv, Amnon   +3 more
core   +1 more source

BPDA-PDA Polyimide: Synthesis, Characterizations, Aging and Semiconductor Device Passivation

, 2012
© 2012 Diaham et al., licensee InTech. This is an open access chapter distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use, distribution, and reproduction in ...
S. Diaham, M. Locatelli, R. Khazaka
semanticscholar   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

Advanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang, Xingyue Yang, Zongmeng Yang, Jing Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang   +8 more
wiley   +1 more source