Results 61 to 70 of about 5,352,312 (303)
Macroscopic quantum state in a semiconductor device
, 2010 We show how nanostructuring of a metallic gate on a field-effect transistor (FET) can lead to a macroscopic, robust and voltage controlled quantum state in the electron channel of a FET.
Hawrylak, Pawel +3 more
core +1 more source
Advanced Functional Materials, EarlyView.Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco +8 more
wiley +1 more source
Science and Technology of Advanced Materials: MethodsSeparated evaluation of factors in the external quantum efficiency (EQE) is important in order to improve the characteristics of semiconductors optical devices.
Keito Mori-Tamamura +9 more
doaj +1 more source
Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures
, 2014 Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to ...
Thorbeck, Ted, Zimmerman, Neil M.
core +2 more sources
Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules
Advanced Functional Materials, EarlyView.A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang +7 more
wiley +1 more source
System for etching thick aluminum layers minimizes bridging and undercutting [PDF]
, 1966 Four step photoresist process for etching thick aluminum layers for semiconductor device contacts produces uniform contact surfaces, eliminates bridging, minimizes undercutting, and may be used on various materials of any ...
core +1 more source
Advanced Functional Materials, EarlyView.The dielectric properties of clays are studied on the level of individual monolayers and functional double stacks. The material breakdown characteristics and charge storage performance are analyzed. For illustration, a defined charge pattern representing a cuneiform character is produced, written into a microscopic clay tile, referencing the origins of
Sebastian Gödrich +6 more
wiley +1 more source
, 2010 We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied.
C. Borrás Pinilla +13 more
core +1 more source
Fast‐Responding O2 Gas Sensor Based on Luminescent Europium Metal‐Organic Frameworks (MOF‐76)
Advanced Functional Materials, EarlyView.Luminescent MOF‐76 materials based on Eu(III) and mixed Eu(III)/Y(III) show rapid and reversible changes in emission intensity in response to O2 with very short response times. The effect is based on triplet quenching of the linker ligands that act as photosensitizers. Average emission lifetimes of a few milliseconds turn out to be mostly unaffected by
Zhenyu Zhao +5 more
wiley +1 more source
Investigation of
IEEE Journal of the Electron Devices Society, 2019 We perform experiments and device simulations to investigate the origin of current-voltage (I-V) linearity of TaOX-based resistive switching memory (RRAM) devices for their possible application as electronic synapses. By using electrical characterization
Changhyuck Sung +8 more
doaj +1 more source