Results 61 to 70 of about 322,683 (317)

Semiconductor ohmic contact [PDF]

, 1977
A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material ...
Hawrylo, Frank Zygmunt, Kressel, Henry
core   +1 more source

Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

, 2010
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device is largely symmetric under the gate voltages applied.
C. Borrás Pinilla, E. P. Nordberg, G. A. Ten Eyck, H. L. Stalford, J. R. Wendt, J. Stevens, K. D. Childs, K. Eng, L. A. Tracy, M. A. Eriksson, M. P. Lilly, M. S. Carroll, R. K. Grubbs, R. W. Young   +13 more
core   +1 more source

Semiconductor quantum dots devices: Recent advances and application prospects [PDF]

, 2006
In this paper, a brief review will be given on recent advances in semiconductor quantum dots based optoelectronic devices. The focus will be on two major application areas, i.e., telecom devices and high power light sources, where some device examples ...
Akiyama, Alizon, Asada, Auzanneau, Bakonyi, Borri, Dery, Deubert, Deubert, Deubert, Fathpour, Gioannini, Hadass, Ju, Kaiser, Kita, Klopf, Ledentsov, Liu, Maksimov, Mukai, Reithmaier, Reithmaier, Sauerwald, Schwertberger, Shchekin, Sumpf, van der Poel, van der Poel   +28 more
core   +1 more source

Enhancing Direct Solar Water Splitting via ALD of Multifunctional TiO2/Pt Nanoparticle Coatings With Engineered Interfaces to GaAs/GaInP Tandem Cells

Advanced Functional Materials, EarlyView.
Multifunctional atomic layer deposited coatings and interface treatments enhance direct solar water splitting on GaAs/GaInP tandem cells. Optimized TiO2/Pt nanoparticle bilayers ensure durability and catalytic efficiency with minimal optical losses, while H2 plasma pretreatments maximize photovoltage and interfacial charge extraction.
Tim F. Rieth, Verena Streibel, Oliver Bienek, Sergej Levashov, Johannes Dittloff, Kristof Möller, Johanna Eichhorn, Matthias M. May, Ian D. Sharp   +8 more
wiley   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

Advanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang, Xingyue Yang, Zongmeng Yang, Jing Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang   +8 more
wiley   +1 more source

Pauli spin blockade at room temperature in double-quantum-dot tunneling through individual deep dopants in silicon

Communications Physics
Pauli spin blockade (PSB) is a spin-dependent charge transport process that typically appears in double quantum dot (QD) devices and is employed in fundamental research on single spins in nanostructures to read out semiconductor qubits.
Yoshisuke Ban, Kimihiko Kato, Shota Iizuka, Hiroshi Oka, Shigenori Murakami, Koji Ishibashi, Satoshi Moriyama, Takahiro Mori, Keiji Ono   +8 more
doaj   +1 more source

A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology

Micromachines, 2015
This paper presents a reflection-type phase shifter (RTPS) at W-band in a 0.13 µm complementary metal oxide semiconductor (CMOS) process. The RTPS is composed of a 90° hybrid coupler and two identical reflection loads.
Xiao-Dong Deng, Yihu Li, Wen Wu, Yong-Zhong Xiong   +3 more
doaj   +1 more source

Investigation of new concepts of adaptive devices Quarterly technical report, 3 Dec. 1968 - 2 Mar. 1969 [PDF]

Conduction mechanisms and transient behavior of memory device using semiconductor ...
Lewis, E., Sewell, F., Wegener, H. A. R.
core   +1 more source

Unassisted Photoelectrochemical Hydrogen Production Coupled with Selective Glucose Oxidation Using Metal Halide Perovskite Photoanodes

Advanced Functional Materials, EarlyView.
A metal halide perovskite‐based photoanode integrated with a CoNiFe layered double hydroxide (LDH) cocatalyst is reported for selective glucose oxidation reaction (GOR), achieving simultaneous and unassisted photoelectrochemical hydrogen production. This system delivers high photocurrent density, excellent Faradaic efficiency of GOR, and strong techno ...
Shujie Zhou, Xu Liu, Michael Gunawan, Yihao Shan, Ming Zhang, Shaine Lucas, Adhi Satriyatama, Denny Gunawan, Ao Wang, Xiaojie Yuan, Kaiwen Sun, Rose Amal, Xiaojing Hao   +12 more
wiley   +1 more source

Laser activated MTOS microwave device [PDF]

, 1985
A light-activated semiconductor device usable as an optoelectronic switch, pulse generator or optical detector is provided. A semiconductor device is disclosed which provides back-to-back metal-thin oxide-silicon (MTOS) capacitors.
Maserjian, J.
core   +1 more source