Results 71 to 80 of about 322,683 (317)

2D Multifunctional Spin‐Orbit Coupled Dirac Nodal Line Materials

open access: yesAdvanced Functional Materials, EarlyView.
A total of 473 nonmagnetic and antiferromagnetic 2D spin‐orbit coupled Dirac nodal line materials are screened, spanning 5 layer groups and 12 magnetic space groups. Furthermore, it integrates their topological properties with electride, multiferroic, and magnetic characteristics, revealing unique systems with expanded functionalities and promising ...
Weizhen Meng   +7 more
wiley   +1 more source

A Flexible 0.18 $\mu{\rm m}$ BiCMOS Technology Suitable for Various Applications

open access: yesIEEE Journal of the Electron Devices Society, 2013
Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance.
Takashi Hashimoto   +9 more
doaj   +1 more source

An improved method for obtaining a normalized junction temperature for semiconductors: A concept [PDF]

open access: yes, 1973
Failure rate for given semiconductor device is simply determined by reading value of normalized junction temperature from printout for any given combination of ambient temperature, stress ratio, and maximum rated junction temperature, and obtaining ...
Trivedi, S. N.
core   +1 more source

The combined viscous semi-classical limit for a quantum hydrodynamic system with barrier potential [PDF]

open access: yes, 2014
We investigate the viscous model of quantum hydrodynamics, which describes the charge transport in a certain semiconductor. Quantum mechanical effects lead to third order derivatives, turning the stationary system into an elliptic system of mixed order ...
Dreher, Michael, Schnur, Johannes
core   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

open access: yesAdvanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp   +7 more
wiley   +1 more source

Spin-current diode with a ferromagnetic semiconductor

open access: yes, 2015
Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias.
Sun, Qing-Feng, Xie, X. C.
core   +1 more source

Reconfigurable Three‐Dimensional Superconducting Nanoarchitectures

open access: yesAdvanced Functional Materials, EarlyView.
3D superconducting nanostructures offer new possibilities for emergent physical phenomena. However, fabricating complex geometries remains challenging. Here 3D nanoprinting of complex 3D superconducting nanoarchitectures is established. As well as propagating superconducting vortices in 3D, anisotropic superconducting properties with geometric ...
Elina Zhakina   +11 more
wiley   +1 more source

Color-selective photodetection from intermediate colloidal quantum dots buried in amorphous-oxide semiconductors

open access: yesNature Communications, 2017
The development of highly sensitive photodetectors is important for image sensing and optical communication applications. Cho et al., report ultra-sensitive photodetectors based on monolayered quantum dots buried in between amorphous-oxide semiconductors
Kyung-Sang Cho   +6 more
doaj   +1 more source

MOSFET analog memory circuit achieves long duration signal storage [PDF]

open access: yes, 1966
Memory circuit maintains the signal voltage at the output of an analog signal amplifier when the input signal is interrupted or removed. The circuit uses MOSFET /Metal Oxide Semiconductor Field Effect Transistor/ devices as voltage-controlled switches ...

core   +1 more source

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