Results 71 to 80 of about 5,352,312 (303)

Induced spin texture in semiconductor/topological insulator heterostructures [PDF]

, 2011
We show that a semiconductor thin film can acquire a non-trivial spin texture due to the proximity effect induced by a topological insulator. The effect stems from coupling to the topological surface states and is present even when the insulator is doped.
G. D. Mahan, Jimmy A. Hutasoit, Tudor D. Stanescu   +2 more
core   +3 more sources

Photoswitching Conduction in Framework Materials

Advanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez, Stefan Hecht, Wolfgang Wenzel, Lars Heinke, Mariana Kozlowska   +4 more
wiley   +1 more source

Solely Light‐Induced Integrate‐and‐Fire 1T‐Neuron Operation and Implementation of the McGurk Effect

Small Structures
The increase in global data processing demands cannot be addressed with the limited architecture and processing speeds of existing technologies. Therefore, neuromorphic systems designed to emulate the functionalities of the human brain have emerged as a ...
Jaehee Lee, Jung Wook Lim, Chohyeon Park
doaj   +1 more source

Backbone Heterojunction Photocatalysts for Efficient Sacrificial Hydrogen Production

Advanced Functional Materials, EarlyView.
Herein, a ‘single‐component’ organic semiconductor photocatalyst is presented in which a molecular donor is bonded to a polymer acceptor. The resultant material demonstrates exceptional photocatalytic activity for hydrogen evolution in aqueous triethylamine with an outstanding external quantum efficiency of 38% at 420 nm.
Richard J. Lyons, Rhys J. Bourhill, Ewan McQueen, Sam D. Harding, Krzysztof Pawlak, Thomas Fellowes, Harry W. Capps, Alexander J. Cowan, Andrew I. Cooper, Adrian M. Gardner, Martijn A. Zwijnenburg, Reiner Sebastian Sprick   +11 more
wiley   +1 more source

Fast electrochemical doping due to front instability in organic semiconductors

, 2011
The electrochemical doping transformation in organic semiconductor devices is studied in application to light-emitting cells. It is shown that the device performance can be significantly improved by utilizing new fundamental properties of the doping ...
C. K. Law, D. Valiev, G. Brodin, L. Edman, L. D. Landau, M. Marklund, M. Modestov, P. Matyba, V. Akkerman, V. Bychkov, Ya. B. Zeldovich   +10 more
core   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

Advanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

Pauli spin blockade at room temperature in double-quantum-dot tunneling through individual deep dopants in silicon

Communications Physics
Pauli spin blockade (PSB) is a spin-dependent charge transport process that typically appears in double quantum dot (QD) devices and is employed in fundamental research on single spins in nanostructures to read out semiconductor qubits.
Yoshisuke Ban, Kimihiko Kato, Shota Iizuka, Hiroshi Oka, Shigenori Murakami, Koji Ishibashi, Satoshi Moriyama, Takahiro Mori, Keiji Ono   +8 more
doaj   +1 more source

A Compact W-Band Reflection-Type Phase Shifter with Extremely Low Insertion Loss Variation Using 0.13 µm CMOS Technology

Micromachines, 2015
This paper presents a reflection-type phase shifter (RTPS) at W-band in a 0.13 µm complementary metal oxide semiconductor (CMOS) process. The RTPS is composed of a 90° hybrid coupler and two identical reflection loads.
Xiao-Dong Deng, Yihu Li, Wen Wu, Yong-Zhong Xiong   +3 more
doaj   +1 more source

Investigation of new concepts of adaptive devices Quarterly technical report, 3 Dec. 1968 - 2 Mar. 1969 [PDF]

Conduction mechanisms and transient behavior of memory device using semiconductor ...
Lewis, E., Sewell, F., Wegener, H. A. R.
core   +1 more source

An improved method for obtaining a normalized junction temperature for semiconductors: A concept [PDF]

, 1973
Failure rate for given semiconductor device is simply determined by reading value of normalized junction temperature from printout for any given combination of ambient temperature, stress ratio, and maximum rated junction temperature, and obtaining ...
Trivedi, S. N.
core   +1 more source