Results 81 to 90 of about 5,352,312 (303)

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

The combined viscous semi-classical limit for a quantum hydrodynamic system with barrier potential [PDF]

, 2014
We investigate the viscous model of quantum hydrodynamics, which describes the charge transport in a certain semiconductor. Quantum mechanical effects lead to third order derivatives, turning the stationary system into an elliptic system of mixed order ...
Dreher, Michael, Schnur, Johannes
core   +1 more source

Reducing Open‐Circuit Voltage Losses in Wide‐Bandgap FAPbBr3 Perovskite Solar Cells for Continuous Unassisted Light‐Driven Water Splitting

Advanced Functional Materials, EarlyView.
The combination of formamidinium thiocyanate and 1,3‐propane diammonium iodide for bulk and top‐surface passivation, and a ternary fullerene blend to improve energy band alignment, suppresses energy losses in wide‐bandgap FAPbBr3 perovskite solar cells.
Laura Bellini, Daniël Grosfeld, Bruno Branco, Guus J. W. Aalbers, Lana M. Kessels, Willemijn H. M. Remmerswaal, Nicolas Daub, Kunal Datta, Martijn M. Wienk, René A. J. Janssen   +9 more
wiley   +1 more source

A Flexible 0.18 $\mu{\rm m}$ BiCMOS Technology Suitable for Various Applications

IEEE Journal of the Electron Devices Society, 2013
Hitachi's SiGe BiCMOS technology, which integrates 0.18 μm CMOS and a SiGe heterojunction bipolar transistor (HBT), does not degrade MOS or bipolar performance.
Takashi Hashimoto, Yusuke Nonaka, Tatsuya Tominari, Tsuyoshi Fujiwara, Tsutomu Udo, Hidenori Satoh, Kunihiko Watanabe, Tomoko Jimbo, Hiromi Shimamoto, Satoru Isomura   +9 more
doaj   +1 more source

Semiconductor ohmic contact [PDF]

, 1977
A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material ...
Hawrylo, Frank Zygmunt, Kressel, Henry
core   +1 more source

Three‐dimensional Antimony Sulfide Based Flat Optics

Advanced Functional Materials, EarlyView.
This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang, Uwe Hübner, Anne Gärtner, Tao Chen, Joseph Köbel, Franka Jahn, Daniel Repp, Abhrodeep Dey, Henrik Schneidwind, Andrea Dellith, Jan Dellith, Torsten Wieduwilt, Matthias Zeisberger, Tanveer Ahmed Shaik, Astrid Bingel, Markus A. Schmidt, Jer‐Shing Huang, Ulf Peschel, Volker Deckert   +18 more
wiley   +1 more source

Laser activated MTOS microwave device [PDF]

, 1985
A light-activated semiconductor device usable as an optoelectronic switch, pulse generator or optical detector is provided. A semiconductor device is disclosed which provides back-to-back metal-thin oxide-silicon (MTOS) capacitors.
Maserjian, J.
core   +1 more source

Two-dimensional hole precession in an all-semiconductor spin field effect transistor [PDF]

, 2004
We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p--doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure.
A.A. Kiselev, B. Lee, B.H. Lee, C. Ciuti, D. Grundler, E.A. de Andrada e Silva, E.I. Rashba, G. Lommer, G. Schmidt, Giuseppe Iannaccone, H. Ohno, J. Fernàndez-Rossier, J. Nitta, J. Nitta, J. Schliemann, J.C. Egues, J.M. Luttinger, J.P. Lu, Jürgen König, L. Pfeiffer, M. Abolfath, M. Governale, M. Grayson, Marco G. Pala, Michele Governale, R. Winkler, R. Winkler, S. Datta, S. Luryi, S.A. Wolf, T. Dietl, T. Dietl, T. Dietl, T. Koga, T. Matsuyama, T. Schäpers, Ulrich Zülicke, Y.A. Bychkov   +37 more
core   +3 more sources

Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics

Advanced Functional Materials, EarlyView.
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha, Yingshan Ma, Yong Nam An, Sung‐Un An, Hyeon Hak Jung, Suvi‐Tuuli Varjamo, Jiwon Yoo, Junho Min, Hanvit Kim, Faisal Ahmed, Sang Hoon Chae, Young Min Song, Weiwei Cai, Tawfique Hasan, Zhipei Sun, Dong‐Ho Kang, Hyeon‐Jin Shin, Yunyun Dai, Hoon Hahn Yoon   +18 more
wiley   +1 more source

Physical Reservoir Computing for Real‐Time Electrocardiogram Arrhythmia Detection Through Controlled Ion Dynamics in Electrochemical Random‐Access Memory

Advanced Electronic Materials
From the perspective of developing low‐power mobile healthcare devices capable of real‐time electrogram diagnosis, memristor‐based physical reservoir computing (PRC) offers a promising alternative to conventional deep neural network (DNN)‐based systems ...
Kyumin Lee, Dongmin Kim, Jongseon Seo, Hyunsang Hwang   +3 more
doaj   +1 more source