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CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference, 2009
A key advantage that semiconductor ring lasers have over Fabry-Perot (FP) devices for relatively high power applications, is that they do not suffer from Catastrophic Optical Damage (COD) to the cleaved facets of the device bar[1]. However, the directional coupler (DC) section in the ring geometry, equivalent to the facet conditions in a FP laser ...
Strain, M.J. +7 more
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A key advantage that semiconductor ring lasers have over Fabry-Perot (FP) devices for relatively high power applications, is that they do not suffer from Catastrophic Optical Damage (COD) to the cleaved facets of the device bar[1]. However, the directional coupler (DC) section in the ring geometry, equivalent to the facet conditions in a FP laser ...
Strain, M.J. +7 more
openaire +3 more sources
Terahertz semiconductor-heterostructure lasers
Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 2002Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1-10 THz; 1 THz = 10(12) Hz)
KOEHLER R. +8 more
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Proceedings of the IEEE, 1966
This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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This paper is a review of semiconductor laser work. The principles of operation are discussed. The stress is on work since early 1964. The present state-of-the-art in GaAs junction lasers is described.
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Applied Optics, 1967
The developments in the field of semiconductor lasers (p-n junction, excited by electron beam and by optical pumping) are considered. Especially emphasized is the problem of the application of the p-n junction laser as a high speed switching element.
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The developments in the field of semiconductor lasers (p-n junction, excited by electron beam and by optical pumping) are considered. Especially emphasized is the problem of the application of the p-n junction laser as a high speed switching element.
openaire +2 more sources
Cosmology with the Laser Interferometer Space Antenna
Living Reviews in Relativity, 2023Germano Nardini
exaly
Pulsed Laser in Liquids Made Nanomaterials for Catalysis
Chemical Reviews, 2021Ryland C Forsythe, Astrid M Müller
exaly