Results 61 to 70 of about 294,135 (248)
Advanced Functional Materials, EarlyView.Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi +3 more
wiley +1 more source
Implantable Ionic Memristors Based on Natural Polymer Heterojunctions
Advanced Functional Materials, EarlyView.We report an implantable natural polymer‐based ionic memristor composed of hyaluronic acid, chitosan, and PDMS. The device achieved 98.94% accuracy in MNIST classification while reducing training time by 36.8% compared with a conventional artificial neural network (ANN).
Dong‐yup Lee +6 more
wiley +1 more source
Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing
Advanced Functional Materials, EarlyView.A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee +10 more
wiley +1 more source
Preventing unwanted atomic layer deposition by liquid sealing
Nano TrendsAtomic layer deposition (ALD) is an essential thin film fabrication technique widely used in electronic and energy systems, but avoiding ALD in untargeted areas has been a long-standing challenge that excludes the possibility of creating patterns through
Haochuan Wang +10 more
doaj +1 more source
, 2017 Invar is made up of 64% iron and 36% nickel. Invar has a characteristic of low thermal expansion coefficient that hardly causes a change of dimension according to temperature change. It is used for shadow mask fabrication by using this feature.
G C Moon +4 more
core +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
Advanced Functional Materials, EarlyView.A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Sensors, 2013 We report fabrication of a microneedle-based three-electrode integrated electrochemical sensor and in-vitro characterization of this sensor for glucose sensing applications.
Youngsam Yoon +3 more
doaj +1 more source
Unclonable plasmonic security labels achieved by shadow-mask-lithography-assisted self-assembly
, 2016 Unclonable plasmonic security labels achieved by shadow-mask-lithography-assisted self ...
JJ Gooding (14460000) +6 more
core
Novel Shadow Mask Structure for Sampled Bragg Gratings in Chalcogenide (As2S3) Planar Waveguides
, 2016 We report a new shadow mask structure for writing sampled Bragg gratings into chalcogenide (As2S3) planar waveguides. This allows long gratings to be written without tilt to produce a grating response with narrow rejection ...
Eggleton, Benjamin J +6 more
core +1 more source
Mask Wearing Behavior, Type of Mask, Frequency Replacement of Mask, and Duration of Mask Wearing with Skindemic [PDF]
, 2022 One of the health protocols to prevent the occurrence of being infected with the coronavirus is using a mask. The use of masks can be a skin disorder, one of which triggers the emergence of a skin epidemic, especially if you don’t pay attention to ...
Wardani, Erika Martining +3 more
core