Results 181 to 190 of about 210,884 (264)

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Correction to "Nanoengineered Shape-Memory Hemostat". [PDF]

Small Sci
europepmc   +1 more source

An In Situ Embedded B-MOF Sponge With Shape-Memory for All-in-One Diabetic Wound Therapy. [PDF]

Adv Healthc Mater
Zhou H, Huang C, Chen Y, Zhao T, Zhu F, Jun G, Zhang J, Pan Y, Wen Q, Yang L, Zhang H, Chen L.   +11 more
europepmc   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Shape Memory Graphene with Ultrahigh Specific Energy Dissipation. [PDF]

Adv Sci (Weinh)
Ho DT, Schwingenschlögl U.
europepmc   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Reversible shape memory two-dimensional covalent organic frameworks. [PDF]

Nat Commun
Shao M, Chen J, Gao W, Zhang Q, Wei X, Kuang J, Liu G, Sun Y, Bian Y, Wang C, Qin M, Yang X, Dong J, Liu Y, Guo Y.   +14 more
europepmc   +1 more source

Three‐Dimensional Anomalous Hall Sensing Enabled By Spin–Orbit Torque Driven Domain Reconfiguration In Chiral Multilayers

Advanced Functional Materials, EarlyView.
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan, Rahul Gupta, Reshma Peremadathil Pradeep, Fabian Kammerbauer, Iryna Kononenko, Klemens Prügl, Michael Kirsch, Bernd Aichner, Santiago Helbig, Florian Bruckner, Claas Abert, Andrada Oana Mandru, Armin Satz, Gerhard Jakob, Hans Josef Hug, Mathias Kläui, Dieter Suess   +16 more
wiley   +1 more source

PolyT-GNN: A Graph Neural Network Framework for Data-Driven Discovery of High-Temperature Two-Way Shape Memory Polymers. [PDF]

ACS Appl Mater Interfaces
Teimouri A, Mu X, Li G.
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source