Results 121 to 130 of about 17,716 (302)

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

open access: yesAdvanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min   +13 more
wiley   +1 more source

The Effect of Operational Cutting Parameters on Nitinol-60 in Wire Electrodischarge Machining

open access: yesAdvances in Materials Science and Engineering, 2013
Shape memory alloys are a kind of active materials, which have significant characteristics in comparison with other alloys. Since these materials are applicable in different fields such as aerospace, automobile industry, medicine, and dentistry, the ...
Ali Akbar LotfiNeyestanak   +1 more
doaj   +1 more source

Transfer Printing and Reconfiguration of Soft Electronics Using Digital Microfluidics and Laser Machining

open access: yesAdvanced Functional Materials, EarlyView.
This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen   +15 more
wiley   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Welding of NiTi alloy with dissimilar metals and its application in aerospace and aviation field

open access: yesHanjie xuebao
NiTi alloy is a shape memory material with significant industrial value, boasting excellent shape memory properties, wear resistance, superelasticity, and biocompatibility. It holds extremely broad application prospects in many fields.
Timing ZHANG   +5 more
doaj   +1 more source

Mechanical characterization of orthodontic superelastic Ni-Ti wires

open access: yes, 2000
ESOMAT 2000, Fifth European Conference on Martensitic Transformations and Shape Memory Alloys, Como, Settembre ...
ARRIGONI M   +3 more
core   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

open access: yesAdvanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone   +8 more
wiley   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Dual‐Inductive and Programmable Switching: A New Paradigm in Ionic Interface‐Controlled Perovskite Memory

open access: yesAdvanced Functional Materials, EarlyView.
A fully programmable, dual‐inductive switchable halide perovskite memristor is demonstrated through precise BDAI2‐mediated interface engineering. This ion‐modulating layer suppresses stochastic filamentary growth, enabling stable, non‐filamentary switching via dynamic barrier modulation.
So‐Yeon Kim, Juan Bisquert
wiley   +1 more source

Synergistic effect of TiN ceramic particle and grain refinement in enhancing the higher performance Ti–V–Al based shape memory alloy

open access: yesJournal of Materials Research and Technology
In the present study, in-situ TiN ceramic particles were introduced into Ti–V–Al based shape memory alloys to optimize mechanical properties and friction resistance. The results revealed that increasing the TiN content resulted in the transition from α''
Wei Liu   +8 more
doaj   +1 more source

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