Results 101 to 110 of about 39,096 (315)

A Lightweight, Flexible and Mechanically Robust Nonwoven Copper Metallized Nylon‐6 Fibers for Enhanced Charge Dissipation and Reduced Electrical Resistance for ESD Protection

Advanced Materials Interfaces, EarlyView.
A breathable and mechanically robust PA6 electrospun textile is modified via physical vapor deposition of a nanoscale copper layer, enabling efficient electrostatic charge dissipation. The resulting material exhibits a 99.6% decrease in triboelectric voltage and a 60% increase in tensile strength, offering a multifunctional solution for electrostatic ...
Piotr K. Szewczyk, Daniel P. Ura, Joanna Knapczyk‐Korczak, Lukáš Halagačka, Kamil Postava, Jacek Nizioł, Urszula Stachewicz   +6 more
wiley   +1 more source

The study on the effect of fracture zone and its orientation on the behavior of shield TBM cable tunnel [PDF]

, 2014
Cho .
openalex   +1 more source

Using a Zero‐Strain Reference Electrode to Distinguish Anode and Cathode Volume Changes in a Solid‐State Battery

Advanced Materials Interfaces, EarlyView.
Volume changes of a solid‐state battery cell are separated into the individual contributions of anode and cathode. Simultaneously determining the “reaction volumes” of both electrodes requires a reference electrode with a pressure‐independent potential.
Mervyn Soans, Benedikt Huber, Marcel Drüschler, Dominic Bresser, Alberto Varzi, Christoffer Karlsson   +5 more
wiley   +1 more source

Segmenting the Semi-Conductive Shielding Layer of Cable Slice Images Using the Convolutional Neural Network [PDF]

, 2020
Wen Zhu, Fei Dong, Beiping Hou, Wesley Kenniard Takudzwa Gwatidzo, Le Zhou, Gang Li   +5 more
openalex   +1 more source

Thermal Resistance of 1D Micron‐Wide Interface Under External Force Modulation

Advanced Materials Interfaces, EarlyView.
A novel TET‐based technique is developed to characterize the interfacial thermal resistance at the microscale. The interfacial thermal resistance is measured at ≈1200–1400 mK/W for natural contact. Externally applied force reduces the thermal resistance dramatically down to ≈125 mK/W.
Amin Karamati, Wangda Qu, Xianglan Bai, Xinwei Wang   +3 more
wiley   +1 more source

Shrinkable sleeve eliminates shielding gap in RF cable [PDF]

, 1965
RF shielding gap between an RF cable and a multipin connector is eliminated by a sleeve assembly installed between the connector and the terminated portion of the shielding. The assembly is enclosed in a heat-shrinkable plastic sleeve which completes the

core   +1 more source

Advancing Mechano‐Bactericidal Surfaces: Mechanisms, Fabrication, and Synergistic Antimicrobial Strategies

Advanced Materials Interfaces, EarlyView.
This review provides a detailed introduction to the fabrication and modulation of nanostructured mechano‐bactericidal surfaces and emphasizes integration of photoactive materials, chemical biocides, stimuli‐responsive self‐cleaning coatings, and electro‐mediated strategies to achieve multifunctional and synergistic antimicrobial effects, providing ...
Yiwen Zhong, Yitong Li, Yang Fu, Zhenfang Zhang, Han Lin, Haiyan Li, Xiao‐Bo Chen, Tianyi Ma, Baohua Jia   +8 more
wiley   +1 more source

Transfer impedance simulation and measurement methods to analyse shielding behaviour of HV cables used in Electric-Vehicles and Hybrid-Electric-Vehicles [PDF]

, 2016
Abid Mushtaq, Stephan Frei
openalex   +1 more source

Printed Interconnects for Heterogeneous Systems Integration on Flexible Substrates

Advanced Materials Technologies, Volume 10, Issue 6, March 18, 2025.
Key components (sensors, energy devices, communication devices, computing chips, and interconnects) of flexible hybrid electronic (FHE) system connected via conductive printed metal tracks. The figure in the insets shows out‐of‐plane printed interconnects providing opportunities for lithography‐free formation of VIAs, in‐plane access of UTCs pads, and ...
Abhishek Singh Dahiya, Adamos Christou, Sihang Ma, Ravinder Dahiya   +3 more
wiley   +1 more source

Silicon‐Integrated Next‐Generation Plasmonic Devices for Energy‐Efficient Semiconductor Applications

Advanced Materials Technologies, EarlyView.
Silicon (Si)‐integrated plasmonics offer a pathway to next‐generation, energy‐efficient semiconductor applications. This review highlights advances using complementary metal–oxide–semiconductor (CMOS)‐compatible materials like transparent conductive oxides and novel architectures, particularly coupled hybrid plasmonic waveguides (CHPWs).
Nasir Alfaraj, Amr S. Helmy
wiley   +1 more source