Results 231 to 240 of about 314,374 (299)

Modeling and Verification of 1/f Noise Mechanisms in FAPbBr3 Single‐Crystal X‐Ray Detectors

open access: yesAdvanced Electronic Materials, EarlyView.
We demonstratethat surface‐trap‐induced carrier number fluctuations are the dominantmechanism in FAPbBr3 Schottky devices, a conclusion supported by thedistinct defect profiles revealed by Drive‐Level Capacitance Profiling (DLCP). Throughnoise contribution decomposition, it is found that the 1/f noise of thedetector is the key noise source affecting ...
Zhongyu Yang   +6 more
wiley   +1 more source

Membrane Pore Formation Unveiled by ∞RETIS Path Sampling: From Thinning to Flip-Flop. [PDF]

open access: yesJ Chem Theory Comput
Zhang DT   +4 more
europepmc   +1 more source

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