Results 211 to 220 of about 1,101,419 (336)

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

Detection, Discrimination, and Localization of Rotor Winding Faults in Doubly Fed Induction Generators Using a Three-Layer ZSC-CASI-CADI Framework. [PDF]

Sensors (Basel)
Aziz MS, Zhang J, Ruzimov S, Huang X, Ahmad A.   +4 more
europepmc   +1 more source

Self‐Hybridized Exciton‐Polariton Photodetectors From Layered Metal‐Organic Chalcogenolates

Advanced Functional Materials, EarlyView.
Self‐hybridized exciton‐polariton photodetectors are demonstrated using high refractive index mithrene, eliminating the need for top mirrors. This simplified architecture enables tunable sub‐bandgap photodetection via lower exciton‐polariton states and enhanced carrier transport through ultrafast polariton group velocities.
Bongjun Choi, Adam D. Alfieri, Wangleong Chen, Deep Jariwala   +3 more
wiley   +1 more source

A DTMOS-Based Memristor Emulator Circuit for Low-Power Biomedical Signal Conditioning. [PDF]

Micromachines (Basel)
Barraj I.
europepmc   +1 more source

Artifact‐Minimizing Ultrathin Transparent Electrodes Fabricated via iCVD for In Vivo Optogenetic Stimulation and Neural Signal Monitoring of Primary Visual Cortex

Advanced Functional Materials, EarlyView.
We present ultrathin flexible transparent electrodes through iCVD‐enabled molecular control of 10 nm gold films on poly(dimethylaminomethylstyrene). In vivo validation demonstrated photoelectric artifact reduction vs. opaque electrodes and preservation of natural neural dynamics.
Tae Jin Mun, Minju Kim, Chaesung Kim, Yunyoung Choi, In‐Yeop Baek, Younghak Cho, Gyeongyong Lee, Yerim Jang, Min‐Ho Nam, Wonryung Lee, Maesoon Im, Hyejeong Seong   +11 more
wiley   +1 more source

Energy efficient approximate compressor architectures for high performance image multiplication in CNTFET technology. [PDF]

Sci Rep
Foroutan P, Navi K.
europepmc   +1 more source

Trifluoromethoxylated Electron Acceptor Enabling Ternary Organic Solar Cells with over 20% Power Conversion Efficiency

Advanced Functional Materials, EarlyView.
ABSTRACT In this work, we introduce a trifluoromethoxy (OCF3) group as a pseudo‐halogen terminal group design for non‐fullerene acceptors, which combines strong inductive electron‐withdrawing ability with moderate resonance donation. The as‐synthesized BTP‐OCF3, when benchmarked against its methoxy analogue BTP‐OCH3, demonstrates narrowed bandgap ...
Chunliang Li, Anhai Liang, Shuwei Qiu, Gavin Ho Ming Ng, Aleksandr Sergeev, Joshua Yuk Lin Lai, Bosen Zou, Xianghao Zeng, Jicheng Yi, Hongxiang Li, Junpo Guo, Wei Liu, Jia Yao, Kam Sing Wong, Zhipeng Kan, Sai Ho Pun, He Yan   +16 more
wiley   +1 more source

Suppressing loop current of shielded loops at fundamental resonance. [PDF]

Sci Rep
Wang W, Jepsen RA, Sánchez-Heredia JD, Zhurbenko V, Ardenkjær-Larsen JH.   +4 more
europepmc   +1 more source

Voltage‐Gated Dedoping of n‐Doped Poly(benzodifurandione) as an Interfacial Protective Mechanism in Electrochromic Devices

Advanced Functional Materials, EarlyView.
Electrochromic polymer stability under overpotential is improved by inserting an ultrathin, transparent n‐doped poly(benzodifurandione) interlayer between indium tin oxide and a poly(3,4‐propylenedioxythiophene)‐based electrochromic polymer. The interlayer supports rapid switching at operating bias, then becomes resistive near +0.8 V to suppress excess
Priyanka Rout, Palak Mehra, Won‐June Lee, Liyan You, Jianguo Mei   +4 more
wiley   +1 more source

Dynamic magnetic circuit analysis of electromagnetic vibration absorber based on corner reluctance. [PDF]

Sci Rep
Wang J, Lou J.
europepmc   +1 more source