Results 31 to 40 of about 6,313,307 (213)

The First Spanish Short Wave Stations. Development of Radio & Tv Technology [PDF]

open access: yes, 2010
In the thirties in Spain there were three big Short Wave Stations. One, belonging to Transradio Española in Aranjuez, 50 kilometers south of Madrid, which rendered radiotelegraphic services to the Canary Islands, Europe and America. Another, belonging to
Romeo Lopez, Jose M.
core  

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Hopping‐Mediated Zero‐Bias Photocharge Retention in Solution‐Processed Van Der Waals Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Liquid–liquid interface assembly enables the fabrication of solution‐processed MoS2 and WSe2 centimeter‐scale, nanometer‐thick type‐II heterostructures on paper. Interfacial charge separation and hopping‐limited recombination produce rectification and persistent photocharge retention at zero bias.
Aniello Pelella   +11 more
wiley   +1 more source

Beam-space MIMO-NOMA Technique for mm-Wave Communication Systems

open access: yesWasit Journal of Engineering Sciences
The multi-input-multi-output-antenna Scheme is regarded as the most promising method for next-generation wireless communication networks that employ millimeter-wave (mm-wave) frequencies and enable them to have a large information throughput.
Haider Salih Al Ammar , Ismail Hburi
doaj   +1 more source

Hybrid Ferroelectric Tunnel Junctions with Intrinsic Nonlinearity and Self‐Rectification via Interfacial Reconstruction

open access: yesAdvanced Functional Materials, EarlyView.
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee   +21 more
wiley   +1 more source

Sacrificial‐Layer‐Assisted Heat‐Affected‐Zone Suppression in Laser Patterning of PET for High‐Performance Flexible Devices

open access: yesAdvanced Functional Materials, EarlyView.
A removable sacrificial polymer layer engineers the thermal boundary condition during nanosecond laser ablation of PET, suppressing heat‐affected‐zone formation without relying on costly ultrafast lasers. This strategy enables deep, high‐aspect‐ratio trenches with no detectable heat‐affected zone, templating silver‐filled mesh electrodes with record ...
Mehdi Zarei   +3 more
wiley   +1 more source

Remote downconversion scheme for uplink configuration in radio/fiber systems [PDF]

open access: yes, 2005
The authors present a novel technology for uplink transmission in radio over fiber (RoF) distribution systems. The technique employs remote downconversion of the uplink data to intermediate frequency (IF) in the base station (BS).
Barry, Liam P.   +3 more
core   +2 more sources

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

open access: yesAdvanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis   +19 more
wiley   +1 more source

Power Consumption and Reduction of High-Power Amplifier in 5G NR Downlink

open access: yesIEEE Access
This article presents a method for estimating the power consumption of radio frequency (RF) power amplifiers (PAs) within the 5G new radio (NR) downlink (from the base station to user equipment), particularly in the absence of user data.
Yuki Takagi   +3 more
doaj   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

open access: yesAdvanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee   +15 more
wiley   +1 more source

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