Results 141 to 150 of about 872,445 (297)
Regiorandom Polythiophenes for Fully Stretchable Electrochemical Transistors and Logic Circuits
Regiorandom (RRa) polythiophenes, once regarded as unsuitable for electronics, exhibit exceptional switching performance via volumetric electrochemical doping. Optimized RRa‐based organic electrochemical transistors (OECTs) achieve a high on/off ratio (≈104), stable operation under 200% strain, and enable fully stretchable logic gates, demonstrating ...
Dong Hyun Park +6 more
wiley +1 more source
2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit +5 more
wiley +1 more source
The rapid development of renewable energy generation, now increasingly integrated through centralized new energy bases, is propelled by government strategy and enabling technologies.
Zehua Su +4 more
doaj +1 more source
Automat optical inspection (AOI) techniques in semiconductor fabrication can be leveraged in battery manufacturing, enabling scalable detection and analysis of electrode‐ and cell‐level imperfections through AI‐driven analytics and a digital‐twin framework.
Jianyu Li, Ertao Hu, Wei Wei, Feifei Shi
wiley +1 more source
This study demonstrates an artificial polymodal nociceptor whose firing threshold is actively modulated by temperature. A volatile TiN/TiOx/ZnO/TiOx/ITO memristor shows interfacial ion–driven resistive switching and membrane‐potential‐like dynamics, enabling temperature‐dependent nociceptive behavior.
Chanmin Hwang +3 more
wiley +1 more source
Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation [PDF]
The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuits is described. A smooth metal surface was obtained by using the 2% Si-sputtered Al.
Woo, D. S.
core +1 more source
Trace amounts of perfluoro‐1‐butanesulfonyl fluoride enables the regulation of the Zn/electrolyte interface by the generated zincophilic ─SO3H groups with long hydrophobic ─CF2 tails, which adsorb strongly onto the Zn surface, displace water molecules from the inner Helmholtz plane, and reconstruct the electrical double‐layer structure.
Dinesh Patel +3 more
wiley +1 more source
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
The effect of different solar simulators on the measurement of short-circuit current temperature coefficients [PDF]
Gallium arsenide solar cells are considered for several high temperature missions in space. Both near-Sun and concentrator missions could involve cell temperatures on the order of 200 C.
Curtis, H. B., Hart, R. E., Jr.
core +1 more source
The carbon cloth electrode with targeted pyridinic nitrogen doping, achieved via urea pyrolysis, effectively modulates the adsorption of Cr(II) species and enhances electron transfer, leading to significantly improved kinetics of the Cr(II)/Cr(III) reaction. The material demonstrates a high discharge capacity of 689.3 mAh and an energy efficiency of 72.
Jinfeng Yi +9 more
wiley +1 more source

