Results 191 to 200 of about 211,409 (307)
Controlled Chemical Synthesis of Color Centers in Nanocrystalline Silicon Carbide. [PDF]
Bezerra SM +4 more
europepmc +1 more source
Cycling Performance of Sodium‐Metal Chloride Battery Cells and Modules Based on Iron and Zinc
High‐utilization sodium–metal chloride cells with a mixed‐metal Fe, Zn, NaCl cathode enable efficient high‐temperature cycling (300°C) while reducing cost and environmental impact. Near‐theoretical capacity and high efficiency are achieved in single cells.
William Nash +10 more
wiley +1 more source
Thermodynamics, Kinetics, and Microstructure of SiC by Chemical Vapor Deposition from the MTS‑H<sub>2</sub> System. [PDF]
Dong P +6 more
europepmc +1 more source
Layered titanates with expanded interlayer galleries reveal how nanoconfinement and electrolyte solvation control Na+ storage kinetics. In diglyme electrolyte, solvent co‐intercalation and strongly reduced interfacial impedance enable increasingly capacitor‐like behavior with increasing interlayer spacing, whereas carbonate electrolytes form resistive ...
Yoga Trianzar Malik +11 more
wiley +1 more source
Hydrothermal Corrosion Resistance of Reaction-Bonded SiC Ceramic: Synergistic Enhancement by Homogeneous MoSi<sub>2</sub> Distribution and Residual Silicon Reduction. [PDF]
Chun S +8 more
europepmc +1 more source
ABSTRACT This study investigates the impact of geographical indication (GI) certification on the export performance of Turkish agri‐food products by analyzing both trade volume and unit value dynamics. Drawing on monthly data from 2000 to 2024 across 22 GI‐certified products, the research employs product‐level regressions, fixed‐effects panel models ...
Ihlas Sovbetov, Muge Burcu Ozdemir
wiley +1 more source
Heteroepitaxial 3C-SiC for MEMS Applications. [PDF]
Garofalo A +6 more
europepmc +1 more source
Behaviour of Titanium in Brazing SiC/SiC and SiC/Stainless Steel
identifier:oai:t2r2.star.titech.ac.jp ...
openaire
CFD modeling and sensitivity‐guided design of silicon filament CVD reactors
Abstract Filament‐based chemical vapor deposition (CVD) for silicon (Si) coatings is often treated as an adaptation of planar deposition. But this overlooks fundamental shifts in transport phenomena and reaction kinetics. In filament CVD, the filament acts as a substrate, heat source, and flow disruptor simultaneously. In this work, we ask: What really
G. P. Gakis +8 more
wiley +1 more source

