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Modeling of SILC based on electron and hole tunneling. II. Steady-state
IEEE Transactions on Electron Devices, 2000exaly
Modeling of SILC based on electron and hole tunneling. I. Transient effects
IEEE Transactions on Electron Devices, 2000exaly
The impact of SILC to data retention in sub-half-micron Embedded EEPROMs
Microelectronic Engineering, 1999exaly
Stress-induced leakage current (SILC) and oxide breakdown: are they from the same oxide traps?
IEEE Transactions on Device and Materials Reliability, 2001exaly
Impact of SILC panel attrition on representativeness
2021Schouten, Barry, Luiten, A
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