Results 311 to 320 of about 47,863 (340)

Silicon-on-Insulator Architectures for Brillouin scattering

Proceedings of the 2022 Conference on Lasers and Electro-Optics Pacific Rim, 2022
We report Brillouin scattering gain in two novel Silicon-on-Insulator architectures – double slab and double-lobed waveguides. We show that the geometrical parameters influence the Brillouin gain and frequency shift, thereby offering flexibility to maximize gain.
B Om Subham, Siva Shakthi A., Vivek Venkataraman, Shankar K. Selvaraja, Amol Choudhary   +4 more
openaire   +1 more source

Silicon-on-insulator technology

IEE Proceedings I Solid State and Electron Devices, 1986
The last few years have seen considerable progress in the development of techniques for producing silicon-on-insulator (SOI) substrates suitable for fabrication of high performance devices/circuits. Among the most promising of the new ideas are those based on buried dielectric formation by ion implantation (oxygen or nitrogen), recrystallisation of ...
openaire   +1 more source

Silicon-on-insulator bipolar transistors

IEEE Electron Device Letters, 1983
Thin-film lateral n-p-n bipolar transistors (BJT) have been fabricated in moving melt zone recrystallized silicon on a 0.5-µm silicon dioxide substrate thermally grown on bulk silicon. Current-voltage characteristics of devices with different base widths (5 and 10 µm) have been analyzed.
M. Rodder, D.A. Antoniadis
openaire   +1 more source

Hydrogen annealed silicon-on-insulator

Applied Physics Letters, 1994
Hydrogen annealing effects on silicon-on-insulator (SOI) materials are reported. High boron concentration of ∼2×1018/cm3 in 0.1-μm-thick SOI layer produced by bond and etch-back SOI (BESOI) method is reduced to ∼ 5×1015/cm3 by annealing at 1150 °C for 1 h.
Nobuhiko Sato, Takao Yonehara
openaire   +1 more source

Frontiers of silicon-on-insulator

Journal of Applied Physics, 2003
Silicon-on-insulator (SOI) wafers are precisely engineered multilayer semiconductor/dielectric structures that provide new functionality for advanced Si devices. After more than three decades of materials research and device studies, SOI wafers have entered into the mainstream of semiconductor electronics.
G. K. Celler, Sorin Cristoloveanu
openaire   +1 more source

Silicon-on-insulator microphotonic devices

SPIE Proceedings, 2006
SOI microwaveguides and associated devices (splitters, turns, ...) are used for light distribution. Rib SOI geometries obtained by shallow etching of the silicon film offer definite advantages for the integration of active devices while fulfilling efficiency and compactness.
Laurent Vivien, Eric Cassan, Delphine Marris-Morini, Sylvain Maine, Mathieu Rouvière, Jean-François Damlencourt, Jean-Marc Fédéli, Anatole Lupu, Daniel Pascal, Xavier Le Roux, Suzanne Laval   +10 more
openaire   +1 more source

Silicon on Insulator

1989
Bulk—Si technology is the technology which has obtained the most impressive results in the last 30 years. It is a mature and well established technology. However, as the demand for high speed, high density circuits increases, the technological processes are becoming more and more sophisticated.
openaire   +1 more source

Silicon-on-Insulator Waveguides

2013
While developed for the needs of microelectronics, the silicon-on-insulator (SOI) wafers are excellent substrates for optical waveguides. SOI is a kind of structures formed by a thin layer of crystalline silicon (Si) on an insulating layer, which typically is silicon dioxide (SiO2).
openaire   +1 more source

Passive broadband silicon-on-insulator polarization splitter

Optics Letters, 2007
We present the implementation of a novel wavelength independent polarization splitter on a silicon-on-insulator platform. The waveguide splitter is based on a zero-order arrayed waveguide grating (AWG) configuration. The splitting function is realized by employing cladding stress-induced birefringence. The device demonstrated a TE to TM splitting ratio
Ye, W. N., Xu, D. -X., Janz, Siegfried, Waldron, Philip, Cheben, Pavel, Tarr, N. G.   +5 more
openaire   +2 more sources

Silicon-on-Insulator Wafers with Buried Cavities

Journal of The Electrochemical Society, 2006
Direct bonding and mechanical thinning of pre-etched silicon wafers have been studied for the fabrication of silicon-on-insulator (SOI) wafers with buried cavities. The thin Si diaphragm over the cavity is deflected downward during the grinding and polishing, as the thinning is carried out without supporting the diaphragm.
Suni, Tommi, Henttinen, Kimmo, Dekker, James, Luoto, Hannu, Kulawski, Martin, Mäkinen, J., Mutikainen, R.   +7 more
openaire   +2 more sources