Results 201 to 210 of about 3,837 (261)

Proton boron capture therapy: microdosimetry and treatment planning study with boron. [PDF]

Front Oncol
Yoo SH, Sedliarou I, MacDiarmid JA, Brahmbhatt H, Han S, Kim KB, Tran LT, Rosenfeld AB, Kim EH, Lin YH, Tan WS, Cheah YY, Wong RX, Looi WS, Ho S, Han KB, Yeo P, Djeng SK.   +17 more
europepmc   +1 more source

Silicon-on-Insulator (SOI) optical waveguides with liquid crystals

, 2012
Ako, Thomas, Beeckman, Jeroen, Neyts, Kristiaan   +2 more
openaire   +1 more source

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Transconductance of Silicon-on-insulator (SOI) MOSFET's

IEEE Electron Device Letters, 1985
Transconductance of n-channel Silicon-on-Insulator (SOI) MOSFET's has been measured with backside gate (substrate) bias as a parameter. For negative values of the backside gate bias, transconductance of SOI transistors is similar to that of bulk devices.
J -P Colinge
exaly   +2 more sources

Birefringence control using stress engineering in silicon-on-insulator (SOI) waveguides

Journal of Lightwave Technology, 2005
We demonstrate that stress engineering is an effective tool to modify or eliminate polarization dispersion in silicon-on-insulator (SOI) waveguide devices, for a wide range of waveguide cross-section shapes and dimensions. The stress-induced effects on the modal birefringence of SOI waveguides are investigated numerically and experimentally.
Winnie N Ye, Boris Lamontagne, N G Tarr   +2 more
exaly   +2 more sources

Silicon-on-insulator (SOI) as a Photonics Platform

ECS Meeting Abstracts, 2006
Abstract not Available.
Dan-Xia Xu, Pavel Cheben, Boris Lamontagne, Siegfried Janz, Winnie Ye   +4 more
openaire   +1 more source

Nanophotonic applications for silicon-on-insulator (SOI)

SPIE Proceedings, 2004
Silicon-on-insulator is a proven technology for very large scale integration of microelectronic devices. The technology also offers the potential for development of nanophotonic devices and the ability to interface such devices to the macroscopic world.
Paul R. de la Houssaye, Stephen D. Russell, Randy L. Shimabukuro   +2 more
openaire   +1 more source

Silicon-on-insulator (SOI) by bonding and ETCH-back

1985 International Electron Devices Meeting, 1985
A silicon wafer bonding process is described in which only thermally grown oxide is present between wafer pairs. Bonding occurs after insertion into an oxidizing ambient. It is proposed the wafers are drawn into intimate contact as a result of the gaseous oxygen between them being consumed by oxidation, thus producing a partial vacuum.
J.B. Lasky, S.R. Stiffler, F.R. White, J.R. Abernathey   +3 more
openaire   +1 more source

Silicon-on-insulator (SOI) structures for pressure sensors

Sensors and Actuators A: Physical, 1991
Abstract The zone-melting-recrystallization method of preparating silicon-on-insulator (SOI) films, its variations, advantages, disadvantages, and its applicability for pressure sensors are considered in this article. The method of artificial epitaxy (graphoepitaxy) allows microstructures in SOI films to be controlled.
Eugene I. Givargizov, Alexander B. Limanov, Gennadi D. Prjakhin, Vladimir I. Vaganov   +3 more
openaire   +1 more source