Results 131 to 140 of about 568,615 (149)
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Japanese Journal of Applied Physics, 1972
The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
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The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
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Metallurgy of Silicon and Silicon Carbide
2020Silicon belongs to VIa group of the Periodic Table of Elements, atomic number 14, atomic mass 28.08, electron shell configuration 3s23p2, exhibits oxidation state +4 (the most stable), +3, +2 and +1. The melting point of silicon is 1415 °C; the boiling point is 3250 °C. The silicon crystal lattice is cubic, face-centered diamond type.
Mikhail Gasik +2 more
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SILICON NANOCRYSTALS ENABLING SILICON PHOTONICS
2010Silicon Photonics is an emerging field of research and technology, where nano-silicon can play a fundamental role. In this chapter, the main building blocks of Silicon Photonics ( waveguides, modulators, sources and detectors) are reviewed and compared to their counterparts made by Si nanocrystals.
Daldosso, Nicola, Pavesi, Lorenzo
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Nitridation of Silicon and Oxidized‐Silicon
Journal of The Electrochemical Society, 1982The nitridation of silicon and oxidized‐silicon has been studied. The nitrided films were prepared at 900°–1150°C under ammonia partial pressures of 10−3 to 5 kg/cm2 in nitrogen and were analyzed by ellipsometry and Auger electron spectroscopy. For films formed by nitridation of silicon, we found that the growth kinetics and properties such as chemical
Y. Hayafuji, K. Kajiwara
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From silicon to silicon carbide
Russian Electrical Engineering, 2007The aspects of the application of new semiconductor materials, including silicon carbide (SiC) and diamond (C), in power electronics are discussed. Experience gained in the development and manufacture of single-crystalline silicon allows the outlook for wide application of SiC and C to be ...
A. M. Surma, Yu. A. Evseev
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Reactions of Silicon with the Silicon Tetrahalides
Zeitschrift für anorganische und allgemeine Chemie, 1957AbstractDie Hochtemperatur‐Reaktionen von Silicium mit den Silicium(IV)‐halogeniden (Si + SiX4 = 2 SiX2) wurden als eine Quelle besonders reinen Siliciums von gewünschtem Kristallhabitus untersucht. Reine Einkristalle wurden durch sorgfältige Wahl der Reaktionsbedingungen dargestellt.
Charles P. Kempter, C. Alvarez‐Tostado
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Diffusion of oxygen and silicon in silicon: Silicon monoxide model
Journal of Materials Research, 2001The diffusion of oxygen in silicon was modeled to result from the diffusion of dissolved silicon monoxide. The SiO molecule dissolved in the largest space in the diamond lattice of silicon, oriented in a 〈111〉 direction, with the oxygen lightly bonded to a network silicon atom.
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The silicon-silicon dioxide system
Proceedings of the IEEE, 1969Study of the silicon-silicon dioxide system as a junction between a nearly ideal semiconductor and insulator has aroused both scientific and technological interest. Surface phenomena associated with this system are influenced by contamination and imperfections in the oxide, impurity redistribution in the silicon near the oxide, and finally by ...
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