Results 161 to 170 of about 1,481,665 (346)

Review of Silicon Carbide Power Devices and Their Applications

IEEE transactions on industrial electronics (1982. Print), 2017
X. She, A. Huang, Óscar Lucía, B. Ozpineci   +3 more
semanticscholar   +1 more source

Structural Porosity and Low Mineral Density in Enamel Rods Drive Molar Incisor Hypomineralisation

Advanced Functional Materials, EarlyView.
This study uses advanced imaging modalities on multiple length scales to show that molar‐incisor hypomineralization does not present as a locally homogeneous pathology. Instead, microstructural defects, characterized through non‐mineralized, protein‐rich sheaths and an altered mineral structure in between prism rods, resulting in local differences in ...
Katharina Jähn‐Rickert, Johannes Krug, Gudrun Lotze, Imke A.K. Fiedler, Diana Freund, Ezgi Deniz Türkoğlu, Christine Plumeyer, Felix N. von Brackel, Anton Davydok, Manfred Burghammer, Thomas Beikler, Thomas F. Keller, Katrin Bekes, Elizabeth A. Zimmermann, Björn Busse   +14 more
wiley   +1 more source

Gas-phase synthesis of the bicyclic silicon tricarbide molecule (c-SiC₃) as a precursor to silicon carbide nanoparticles in space. [PDF]

Chem Sci
Goettl SJ, Fujioka K, Alves MO, Silva MX, Yang Z, Metya S, Medvedkov IA, Sattasathuchana T, Galvão BRL, Sun R, Kaiser RI.   +10 more
europepmc   +1 more source

Silicon Photomultipliers as a Low-Cost Fluorescence Detector for Capillary Electrophoresis

, 2020
Brae V. Petersen, Luke A. Gallion, Nancy L. Allbritton   +2 more
openalex   +2 more sources

Scalable Thermal Engineering via Femtosecond Laser‐Direct‐Written Phononic Nanostructures

Advanced Functional Materials, EarlyView.
This study demonstrates that femtosecond laser‐induced periodic surface structures (fs‐LIPSS) can function as phononic metasurfaces, reducing thermal conductivity below the plain thin‐film limit. Phonon Monte Carlo analysis reveals that the periodic structures restrict phonon mean free paths.
Hiroki Hamma, Roman Anufriev, Kazuyoshi Fushinobu, Masahiro Nomura, Byunggi Kim   +4 more
wiley   +1 more source

Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer

Advanced Functional Materials, EarlyView.
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero, Meghna Jha, Elsa Veronica Flores‐Vela, Joost Kimpel, Andreas Schaefer, Jiali Guo, Jesika Asatryan, Alberto Peinador Veiga, Shuichi Haraguchi, Per‐Anders Carlsson, Jaime Martín, Mariano Campoy‐Quiles, Christian Müller   +12 more
wiley   +1 more source

Harnessing diverse hybrid integration for bridging trans-scale multi-dimensional fiber-chip data transmission and processing. [PDF]

Light Sci Appl
Li K, Yan G, Wang K, Cai C, Yang M, Wu G, Zhao W, Peng Y, Shi Y, Dai D, Wang J.   +10 more
europepmc   +1 more source

Laser‐Welded Cellulose‐Carbon Nanotube Nanocomposites as a 3D Scaffold of Si Anodes for High‐Performance Lithium‐Ion Batteries

Advanced Functional Materials, EarlyView.
A Si anode comprising entangled networks of cellulose and SWCNT (C‐CNT) nanocomposites as an anode electrode for a high‐performance LIB is realized by fully utilizing the generated microstructure of a novel conductive 3D scaffold via a low‐temperature and eco‐friendly process. Additionally, localized heating via photo‐thermal conversion can be utilized
Boeun Ryu, Younghoon Jung, Hojin Son, Min‐Young Kim, Jinsub Lim, Changhun Yun   +5 more
wiley   +1 more source

Dataset - A Comprehensive Evaluation of Contact Recombination and Contact Resistivity Losses in Industrial Silicon Solar Cells

, 2020
Mengjie Li
openalex   +1 more source

Asymmetric Contact Engineering for Bottleneck‐Free Transport in 2D MoS2 Field‐Effect Transistor

Advanced Functional Materials, EarlyView.
Performance of 2D semiconductor transistors is limited by carrier transport bottlenecks arising from specific device geometries. By identifying this structural limitation, a bottleneck‐free asymmetric transistor architecture (BATA) is introduced to improve carrier transport.
Jinhyeok Pyo, Junsung Byeon, Jungmoon Lim, Sohyeon Park, Sungsan Kang, Byeongchan Kim, Gyuhwi Jeong, Haerim Kim, Bongjun Kim, SeungNam Cha, Sangyeon Pak   +10 more
wiley   +1 more source