Results 301 to 310 of about 1,778,075 (341)

Strained-Silicon on Silicon and Strained-Silicon on Silicon-Germanium on Silicon by Relaxed Buffer Bonding

Journal of The Electrochemical Society, 2006
We report the creation of two novel complementary metal oxide semiconductor CMOS -compatible platforms: strained-silicon onsilicon SSOS and strained-silicon on silicon-germanium on silicon SGOS . SSOS substrate has an epitaxially defined, strained-silicon layer directly on silicon wafer without an intermediate SiGe or oxide layer. SSOS is a homochemical
David M. Isaacson, Gianni Taraschi, Arthur J. Pitera, Nava Ariel, Thomas A. Langdo, Eugene A. Fitzgerald   +5 more
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Gluing silicon with silicone

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1998
Abstract Problems and solutions concerning the gluing of silicon detectors are discussed. The R & D work for the HERA- B vertex detector system led to gluing studies with epoxy and silicone-based adhesives used on ceramics and carbon fibre. The HERA- B solution using a silicone glue is presented.
Abt, I., Fox, H., Moshous, B., Richter, Rainer Helmut, Riechmann, K., Rietz, M., Riedl, J., St. Denis, Richard Dante, Wagner, W.   +8 more
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Silicon and Silicone Levels in Patients with Silicone Implants

1996
Although a potential link between silicone gel breast implants and autoimmune connective tissue disease has been suggested, none has been proven. The potential role of silicone as an immune adjuvant remains very controversial. Currently available techniques do not easily allow precise measurements of silicone in tissues.
W, Peters, D, Smith, S, Lugowski, A, McHugh, P, MacDonald, C, Baines   +5 more
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SILICON

Annual Review of Plant Physiology and Plant Molecular Biology, 1999
▪ Abstract  Silicon is present in plants in amounts equivalent to those of such macronutrient elements as calcium, magnesium, and phosphorus, and in grasses often at higher levels than any other inorganic constituent. Yet except for certain algae, including prominently the diatoms, and the Equisetaceae (horsetails or scouring rushes), it is not ...
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Silicon-On-Silicon Packaging

IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1984
Honeywell's new packaging technique uses silicon as a multichip substrate. Multiple integrated circuit (IC) chips are flip bonded by controlled collapse joining to a silicon substrate. The silicon substratc provides the interconnections between chips and the next level of interface.
R. Spielberger, C. Huang, W. Nunne, A. Mones, D. Fett, F. Hampton   +5 more
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Microcrystalline silicon formation by silicon nanoparticles

Journal of Applied Physics, 2008
Thin silicon films are of great importance for large-area electronic applications, for example, as the basis for switching electronics in flat-panel display devices or as the active layer of solar cells. In this paper, we show that silicon nanoparticles have the potential to be used as raw material for further processing toward a microcrystalline ...
Schierning, G., Theissmann, R., Wiggers, H., Sudfeld, D., Ebbers, A., Franke, D., Witusiewicz, V. T., Apel, M.   +7 more
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Crystalline anodic silicon dioxide on silicon

Physica Status Solidi (a), 1978
Multi-layer oxide film grows in anodic oxidation of silicon p-type in 0.1 N water diluted hydrofluoric acid. The inner layer of the oxide film on the silicon monocrystal substrate is of α-quartz, while the outer layer of the oxide film to the electrolyte interface is amorphous.
A. A. Konova, M. G. Michailov
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Silicon/silicon oxide and silicon/silicon nitride multilayers for extreme ultraviolet

Optical Engineering, 1991
Si/SiO2 and Si/Si3N4 multilayers have been fabricated using a locally made reactive diode ri-sputtering system. The layer alternation is obtained by modulating a partial pressure of oxygen or nitrogen near the sample using a silicon target with argon as sputtering gas.
Boher, Pierre, Houdy, Philippe, Hennet, Louis, Delaboudinière, J.P.   +3 more
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Silicon/silicon oxide and silicon/silicon nitride multilayers for XUV optical applications

SPIE Proceedings, 1991
Si/Si02 and Si/Si3N4 multilayers have been fabricated using a locally made reactive diode if-sputtering systern. 'Ihe layer alternation is obtained by modulating a partial pressure of oxygen or nitrogen near the sample using a silicon target and argon as sputtering gas.
Boher, Pierre, Houdy, Philippe, Hennet, Louis, Delaboudiniere, Jean-Pierre, Kuehne, Mikhael, Mueller, Peter, Li, Zhigang, Smith, David   +7 more
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Silicon-silicon interfaces

Applied Physics Letters, 1982
A wide variety of measurements on silicon grain boundaries shows that the electronic properties of such boundaries are much like those of Si surfaces in all essential respects. Moreover, the properties of ’’clean’’ surfaces and lightly contaminated surfaces can be studied on many crystallographic orientations of the interfaces without the need for ...
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