Results 301 to 310 of about 1,760,498 (336)
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IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1984
Honeywell's new packaging technique uses silicon as a multichip substrate. Multiple integrated circuit (IC) chips are flip bonded by controlled collapse joining to a silicon substrate. The silicon substratc provides the interconnections between chips and the next level of interface.
W. Nunne +5 more
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Honeywell's new packaging technique uses silicon as a multichip substrate. Multiple integrated circuit (IC) chips are flip bonded by controlled collapse joining to a silicon substrate. The silicon substratc provides the interconnections between chips and the next level of interface.
W. Nunne +5 more
openaire +2 more sources
Silicon and Silicone Levels in Patients with Silicone Implants
1996Although a potential link between silicone gel breast implants and autoimmune connective tissue disease has been suggested, none has been proven. The potential role of silicone as an immune adjuvant remains very controversial. Currently available techniques do not easily allow precise measurements of silicone in tissues.
Walter Peters +5 more
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Silicon/silicon oxide and silicon/silicon nitride multilayers for extreme ultraviolet
Optical Engineering, 1991Si/SiO2 and Si/Si3N4 multilayers have been fabricated using a locally made reactive diode ri-sputtering system. The layer alternation is obtained by modulating a partial pressure of oxygen or nitrogen near the sample using a silicon target with argon as sputtering gas.
Louis Hennet +6 more
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Silicon, Silicone, and Breast Implants
Pediatrics, 2002To the Editor .— More than 200 000 breast implant augmentation procedures have been performed annually in the United States in recent years, most on teenagers and young women of reproductive age.1 As a result, many nursing mothers have breast implants—all composed at least in part of silicone.
Diana M. Zuckerman, Jae Hong Lee
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Applied Physics Letters, 1982
A wide variety of measurements on silicon grain boundaries shows that the electronic properties of such boundaries are much like those of Si surfaces in all essential respects. Moreover, the properties of ’’clean’’ surfaces and lightly contaminated surfaces can be studied on many crystallographic orientations of the interfaces without the need for ...
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A wide variety of measurements on silicon grain boundaries shows that the electronic properties of such boundaries are much like those of Si surfaces in all essential respects. Moreover, the properties of ’’clean’’ surfaces and lightly contaminated surfaces can be studied on many crystallographic orientations of the interfaces without the need for ...
openaire +2 more sources
Silicon/silicon oxide and silicon/silicon nitride multilayers for XUV optical applications
SPIE Proceedings, 1991Si/Si02 and Si/Si3N4 multilayers have been fabricated using a locally made reactive diode if-sputtering systern. 'Ihe layer alternation is obtained by modulating a partial pressure of oxygen or nitrogen near the sample using a silicon target and argon as sputtering gas.
Boher, Pierre +7 more
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Annual Review of Plant Physiology and Plant Molecular Biology, 1999
▪ Abstract Silicon is present in plants in amounts equivalent to those of such macronutrient elements as calcium, magnesium, and phosphorus, and in grasses often at higher levels than any other inorganic constituent. Yet except for certain algae, including prominently the diatoms, and the Equisetaceae (horsetails or scouring rushes), it is not ...
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▪ Abstract Silicon is present in plants in amounts equivalent to those of such macronutrient elements as calcium, magnesium, and phosphorus, and in grasses often at higher levels than any other inorganic constituent. Yet except for certain algae, including prominently the diatoms, and the Equisetaceae (horsetails or scouring rushes), it is not ...
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Physical Review Letters, 1990
The presence of Cu atoms in p-type Si is detected via their characteristic electric-field gradients measured at the radioactive acceptor $^{111}\mathrm{In}$${/}^{111}$Cd by the perturbed \ensuremath{\gamma}\ensuremath{\gamma} angular correlation technique.
Keller, R. +5 more
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The presence of Cu atoms in p-type Si is detected via their characteristic electric-field gradients measured at the radioactive acceptor $^{111}\mathrm{In}$${/}^{111}$Cd by the perturbed \ensuremath{\gamma}\ensuremath{\gamma} angular correlation technique.
Keller, R. +5 more
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Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride
Technical Physics Letters, 2018Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are ...
Vladimir A. Gritsenko +3 more
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