Results 311 to 320 of about 1,778,075 (341)

Silicon Photonics: silicon nitride versus silicon-on-insulator

Optical Fiber Communication Conference, 2016
Silicon photonics typically builds on a silicon-on-insulator based high-index-contrast waveguide system. Silicon nitride provides an alternative moderate-index-contrast system that is manufacturable in the same CMOS environment. This paper discusses the relative benefits of both platforms.
Roel Baets, Ananth Z. Subramanian, Stéphane Clemmen, Bart Kuyken, Peter Bienstman, Nicolas Le Thomas, Günther Roelkens, Dries Van Thourhout, Philippe Helin, Simone Severi   +9 more
openaire   +1 more source

Local Oscillations of Silicon–Silicon Bonds in Silicon Nitride

Technical Physics Letters, 2018
Raman spectra of films of nearly stoichiometric amorphous silicon nitride (a-Si3N4) reveal a contribution due to local oscillations of silicon–silicon (Si–Si) bonds. This observation directly confirms that the almost stoichiometric a-Si3N4 contains Si–Si bonds, which, according to theoretical predictions, act as electron and hole traps that are ...
V. A. Volodin, V. A. Gritsenko, A. Chin
openaire   +1 more source

SILICON NANOCRYSTALS ENABLING SILICON PHOTONICS

2010
Silicon Photonics is an emerging field of research and technology, where nano-silicon can play a fundamental role. In this chapter, the main building blocks of Silicon Photonics ( waveguides, modulators, sources and detectors) are reviewed and compared to their counterparts made by Si nanocrystals.
Daldosso, Nicola, Pavesi, Lorenzo
openaire   +3 more sources

Electrical Charactristics of Polycrystalline Silicon-Silicon Nitride-Silicon Dioxide-Silicon Structures

Japanese Journal of Applied Physics, 1972
The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
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Silica, Silicon and Silicones...Unraveling the Mystery

1996
Silicon is an element - the second most abundant element in terrestrial earth. However, silicon is never found in nature as the raw element, but rather in combination with oxygen to yield various forms of silicas, silicates, glasses, and sand. Silicon in this combination with oxygen, makes up 75% of the Earth’s crust. The name for the element, silicium
T H, Lane, S A, Burns
openaire   +2 more sources

From Silicon Cell to Silicon Human

2011
This chapter discusses the silicon cell paradigm, i.e. the existing systems biology activity of making experiment-based computer replica of parts of biological systems. Now that such mathematical models are accessible to in silico experimentation through the World-Wide Web, a new future has come to biology.
Westerhoff, Hans V., Verma, Malkhey, Bruggeman, Frank J., Kolodkin, Alexey, Swat, Maciej, Hayes, Neil, Nardelli, Maria, Bakker, Barbara M., Snoep, Jacky L.   +8 more
openaire   +3 more sources

Silicone emulsions

Advances in Colloid and Interface Science, 2006
Silicone polymers are a class of hybrid organic/inorganic polymers, that show desirable surface properties such as low surface energy and high flexibility, which enables even a very high molecular weight chain to achieve optimal orientation at the interface.
P, Somasundaran, Somil C, Mehta, Parag, Purohit   +2 more
openaire   +2 more sources

Porous Silicon by Galvanostatic Electrochemical Anodisation of Epitaxial Silicon, Polycrystalline Silicon and Silicon on Insulator Layers

2013
Porous silicon (PSi) samples were prepared by galvanostatic electrochemical anodization of epitaxial silicon, polycrystalline silicon and silicon on insulator layers. Structural and optical properties of prepared samples were investigated by Raman and photoluminescence (PL) spectroscopy, field emission scanning electron microscopy (FE-SEM) and energy ...
Đerek, Vedran, Gamulin, Ozren, Ivanda, Mile, Balarin, Maja, Kosović, Marin, Ristić, Davor, Musić, Svetozar, Ristić, Mira   +7 more
openaire   +1 more source

Diffusion of oxygen and silicon in silicon: Silicon monoxide model

Journal of Materials Research, 2001
The diffusion of oxygen in silicon was modeled to result from the diffusion of dissolved silicon monoxide. The SiO molecule dissolved in the largest space in the diamond lattice of silicon, oriented in a 〈111〉 direction, with the oxygen lightly bonded to a network silicon atom.
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The donor concentration in silicon implanted silicon and silicon on sapphire

IEEE SOS/SOI Technology Conference, 2003
Summary form only given. The effective number of carriers in self-implanted silicon on sapphire is studied. The penetration of the materials by the double solid phase epitaxy method (DSPE) is discussed. In order to measure the depth distribution of the implantation-induced donors, silicon was implanted in 2 ohm cm n ...
openaire   +1 more source