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Silicon Photonics: silicon nitride versus silicon-on-insulator
Optical Fiber Communication Conference, 2016Silicon photonics typically builds on a silicon-on-insulator based high-index-contrast waveguide system. Silicon nitride provides an alternative moderate-index-contrast system that is manufacturable in the same CMOS environment. This paper discusses the relative benefits of both platforms.
Bart Kuyken +9 more
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The donor concentration in silicon implanted silicon and silicon on sapphire [PDF]
IEEE SOS/SOI Technology Conference, 2003 Summary form only given. The effective number of carriers in self-implanted silicon on sapphire is studied. The penetration of the materials by the double solid phase epitaxy method (DSPE) is discussed. In order to measure the depth distribution of the implantation-induced donors, silicon was implanted in 2 ohm cm n ...
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From Silicon Cell to Silicon Human
2011This chapter discusses the silicon cell paradigm , i.e. the existing systems biology activity of making experiment-based computer replica of parts of biological systems. Now that such mathematical models are accessible to in silico experimentation through the World-Wide Web , a new future has come to biology.
Frank J. Bruggeman +9 more
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2005
This article deals with generalities and definitions of porous silicon (PSi): fabrication techniques, structural properties, chemical properties, electronic properties, electrical properties, optical properties, and actual or potential applications of PSi.
Gaburro, Zeno +2 more
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This article deals with generalities and definitions of porous silicon (PSi): fabrication techniques, structural properties, chemical properties, electronic properties, electrical properties, optical properties, and actual or potential applications of PSi.
Gaburro, Zeno +2 more
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European Journal of Clinical Investigation, 2010
Since the 1960s, silicone implants have been successfully used for breast augmentation and reconstruction. However, safety issues regarding the use of silicone have led to a moratorium by the US Food and Drug Administration between 1992 and 2006.To date, although the moratorium has been removed and women overwhelmingly prefer silicone over saline ...
Steven D. Hajdu +3 more
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Since the 1960s, silicone implants have been successfully used for breast augmentation and reconstruction. However, safety issues regarding the use of silicone have led to a moratorium by the US Food and Drug Administration between 1992 and 2006.To date, although the moratorium has been removed and women overwhelmingly prefer silicone over saline ...
Steven D. Hajdu +3 more
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Metallurgy of Silicon and Silicon Carbide
2020Silicon belongs to VIa group of the Periodic Table of Elements, atomic number 14, atomic mass 28.08, electron shell configuration 3s23p2, exhibits oxidation state +4 (the most stable), +3, +2 and +1. The melting point of silicon is 1415 °C; the boiling point is 3250 °C. The silicon crystal lattice is cubic, face-centered diamond type.
Mikhail Gasik +2 more
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Silicon needles in porous silicon
Thin Solid Films, 1996Abstract A model is presented which explains the high degree of linear polarization of luminescence which was observed in porous silicon under non-resonant excitation. Porous silicon is supposed to be composed of elongated nanocrystals. We show that because of the anisotropy of the depolarizing field in silicon needles polarized light excites ...
R.A Suris, P Lavallard
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SILICON NANOCRYSTALS ENABLING SILICON PHOTONICS
2010Silicon Photonics is an emerging field of research and technology, where nano-silicon can play a fundamental role. In this chapter, the main building blocks of Silicon Photonics ( waveguides, modulators, sources and detectors) are reviewed and compared to their counterparts made by Si nanocrystals.
Daldosso, Nicola, Pavesi, Lorenzo
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Japanese Journal of Applied Physics, 1972
The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
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The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
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Nitridation of Silicon and Oxidized‐Silicon
Journal of The Electrochemical Society, 1982The nitridation of silicon and oxidized‐silicon has been studied. The nitrided films were prepared at 900°–1150°C under ammonia partial pressures of 10−3 to 5 kg/cm2 in nitrogen and were analyzed by ellipsometry and Auger electron spectroscopy. For films formed by nitridation of silicon, we found that the growth kinetics and properties such as chemical
Y. Hayafuji, K. Kajiwara
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