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Porous Silicon

2005
This article deals with generalities and definitions of porous silicon (PSi): fabrication techniques, structural properties, chemical properties, electronic properties, electrical properties, optical properties, and actual or potential applications of PSi.
Gaburro, Zeno   +2 more
openaire   +3 more sources

Silicon needles in porous silicon

Thin Solid Films, 1996
Abstract A model is presented which explains the high degree of linear polarization of luminescence which was observed in porous silicon under non-resonant excitation. Porous silicon is supposed to be composed of elongated nanocrystals. We show that because of the anisotropy of the depolarizing field in silicon needles polarized light excites ...
R.A Suris, P Lavallard
openaire   +2 more sources

Metallurgy of Silicon and Silicon Carbide

2020
Silicon belongs to VIa group of the Periodic Table of Elements, atomic number 14, atomic mass 28.08, electron shell configuration 3s23p2, exhibits oxidation state +4 (the most stable), +3, +2 and +1. The melting point of silicon is 1415 °C; the boiling point is 3250 °C. The silicon crystal lattice is cubic, face-centered diamond type.
Mikhail Gasik   +2 more
openaire   +2 more sources

Silicone and autoimmunity

European Journal of Clinical Investigation, 2010
Since the 1960s, silicone implants have been successfully used for breast augmentation and reconstruction. However, safety issues regarding the use of silicone have led to a moratorium by the US Food and Drug Administration between 1992 and 2006.To date, although the moratorium has been removed and women overwhelmingly prefer silicone over saline ...
Steven D. Hajdu   +3 more
openaire   +3 more sources

Two-dimensional devices and integration towards the silicon lines

Nature Materials, 2022
Shuiyuan Wang   +5 more
semanticscholar   +1 more source

Electrical Charactristics of Polycrystalline Silicon-Silicon Nitride-Silicon Dioxide-Silicon Structures

Japanese Journal of Applied Physics, 1972
The influences of annealing at high temperatures and of impurity diffusion such as phosphorus and boron on fast surface states and instabilities under bias-temperature treatment were investigated. The fast surface states and instabilities increased by annealing in nitrogen, argon and oxygen. The instabilities were caused by the increase in conductivity
openaire   +2 more sources

Reactions of Silicon with the Silicon Tetrahalides

Zeitschrift für anorganische und allgemeine Chemie, 1957
AbstractDie Hochtemperatur‐Reaktionen von Silicium mit den Silicium(IV)‐halogeniden (Si + SiX4 = 2 SiX2) wurden als eine Quelle besonders reinen Siliciums von gewünschtem Kristallhabitus untersucht. Reine Einkristalle wurden durch sorgfältige Wahl der Reaktionsbedingungen dargestellt.
Charles P. Kempter, C. Alvarez‐Tostado
openaire   +2 more sources

Nitridation of Silicon and Oxidized‐Silicon

Journal of The Electrochemical Society, 1982
The nitridation of silicon and oxidized‐silicon has been studied. The nitrided films were prepared at 900°–1150°C under ammonia partial pressures of 10−3 to 5 kg/cm2 in nitrogen and were analyzed by ellipsometry and Auger electron spectroscopy. For films formed by nitridation of silicon, we found that the growth kinetics and properties such as chemical
Y. Hayafuji, K. Kajiwara
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SILICON NANOCRYSTALS ENABLING SILICON PHOTONICS

2010
Silicon Photonics is an emerging field of research and technology, where nano-silicon can play a fundamental role. In this chapter, the main building blocks of Silicon Photonics ( waveguides, modulators, sources and detectors) are reviewed and compared to their counterparts made by Si nanocrystals.
Daldosso, Nicola, Pavesi, Lorenzo
openaire   +3 more sources

From silicon to silicon carbide

Russian Electrical Engineering, 2007
The aspects of the application of new semiconductor materials, including silicon carbide (SiC) and diamond (C), in power electronics are discussed. Experience gained in the development and manufacture of single-crystalline silicon allows the outlook for wide application of SiC and C to be ...
A. M. Surma, Yu. A. Evseev
openaire   +2 more sources

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