Results 111 to 120 of about 47,237 (156)
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1991
A process is described for forming silicon carbide coatings on nickel based superalloys by: i) nitriding the alloy or depositing a titanium nitride film on the alloy by reactive sputtering; ii) vapour phase chemica deposition of a thin film of titanium nitride; iii) annealing in a nitrogen and hydrogen atmosphere; iv) vapour phase chemical deposition ...
V. Adoncecchi +3 more
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A process is described for forming silicon carbide coatings on nickel based superalloys by: i) nitriding the alloy or depositing a titanium nitride film on the alloy by reactive sputtering; ii) vapour phase chemica deposition of a thin film of titanium nitride; iii) annealing in a nitrogen and hydrogen atmosphere; iv) vapour phase chemical deposition ...
V. Adoncecchi +3 more
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From silicon to silicon carbide
Russian Electrical Engineering, 2007The aspects of the application of new semiconductor materials, including silicon carbide (SiC) and diamond (C), in power electronics are discussed. Experience gained in the development and manufacture of single-crystalline silicon allows the outlook for wide application of SiC and C to be ...
Yu. A. Evseev, A. M. Surma
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Metallurgy of Silicon and Silicon Carbide
2020Silicon belongs to VIa group of the Periodic Table of Elements, atomic number 14, atomic mass 28.08, electron shell configuration 3s23p2, exhibits oxidation state +4 (the most stable), +3, +2 and +1. The melting point of silicon is 1415 °C; the boiling point is 3250 °C. The silicon crystal lattice is cubic, face-centered diamond type.
Mikhail Gasik +2 more
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Physics Today, 1959
There exists a need, especially in the cases of some military applications, for a stable, high-temperature semiconductor material. Active and passive devices fabricated from such a material could operate in a high-temperature ambient and simultaneously resist radiation damage.
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There exists a need, especially in the cases of some military applications, for a stable, high-temperature semiconductor material. Active and passive devices fabricated from such a material could operate in a high-temperature ambient and simultaneously resist radiation damage.
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Silicon Carbide Fiber Reinforced Recrystallized Silicon Carbide
Key Engineering Materials, 2004J. Kriegesmann, Matthias Schumacher
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One step co-sintering of silicon carbide ceramic membrane with the aid of boron carbide
Journal of the European Ceramic Society, 2021Chuncheng Wei, Peng Wang, Peiling Gao
exaly
Silicon carbide and epitaxial graphene on silicon carbide
2018C. Berger, E. H. Conrad, W. A. de Heer
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