Results 201 to 210 of about 21,571 (264)
Ultra-thin (<2 µm) silicon carbide free-standing membranes as beam position monitors for soft and tender X-ray beamlines. [PDF]
J Synchrotron RadiatMedina E +12 more
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An Efficient Manufacturing Method for Silicon Carbide Crystals in Polymers Based on a Multiscale Simulation-Driven Approach. [PDF]
Micromachines (Basel)Wang J, Jia C, Sun H, Tian Y.
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Journal of the American Ceramic Society, 1990
Composites of SiC/Si and SiC/SiC were prepared from single yarns of SiC. The use of carbon coatings on SiC yarn prevented the degradation normally observed when chemically vapor deposited Si is applied to SiC yarn. The strength, however, was not retained when the composite was heated at elevated temperatures in air. In contrast, the strength of a SiC/C/
Michael Kmetz +2 more
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Composites of SiC/Si and SiC/SiC were prepared from single yarns of SiC. The use of carbon coatings on SiC yarn prevented the degradation normally observed when chemically vapor deposited Si is applied to SiC yarn. The strength, however, was not retained when the composite was heated at elevated temperatures in air. In contrast, the strength of a SiC/C/
Michael Kmetz +2 more
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From graphene to silicon carbide: ultrathin silicon carbide flakes
Nanotechnology, 2016This study presents a new ultrathin SiC structure prepared by a catalyst free carbothermal method and post-sonication process. We have found that merging ultra-light 3D graphene foam and SiO together at high temperature leads to the formation of a complex SiC structure consisting of 3D SiC foam covered with traditional 1D nanowires.
Sakineh, Chabi +3 more
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Fracture of silicon carbide fibre
Composites, 1970SILICON carbide fibre in the form of a 100 µm diameter polycrystalline coating on a 12 µm tungsten wire substrate is now commercially available. The short term strength of this material has been shown1 to be essentially constant to 1,100° C, but creep rupture results (unpublished work of K. F. A.
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Physics Today, 1959
There exists a need, especially in the cases of some military applications, for a stable, high-temperature semiconductor material. Active and passive devices fabricated from such a material could operate in a high-temperature ambient and simultaneously resist radiation damage.
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There exists a need, especially in the cases of some military applications, for a stable, high-temperature semiconductor material. Active and passive devices fabricated from such a material could operate in a high-temperature ambient and simultaneously resist radiation damage.
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Silicon carbide and epitaxial graphene on silicon carbide
2018C. Berger, E. H. Conrad, W. A. de Heer
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