Results 201 to 210 of about 130,070 (297)
This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi +8 more
wiley +1 more source
High-Compressive-Strength Silicon Carbide Ceramics with Enhanced Mechanical Performance. [PDF]
Qian Z +5 more
europepmc +1 more source
Roughness Measurements at Small and Uneven Surfaces of Ceramic Foam Filters
ABSTRACT This study investigated the possibility of roughness characterization of ceramic foam filters using a laser scanning microscope, examining the influence of magnification, measured area, cutoff wavelength (λc), measured roughness parameter, and position within the ceramic foam on the measured roughness data. Firstly, the effect of magnification
Claudia Voigt +3 more
wiley +1 more source
Silicon Carbide Photonic Crystal Photoelectrode. [PDF]
Zhang X, John S.
europepmc +1 more source
MXene‐Based Flexible Memory and Neuromorphic Devices
The unique two‐dimensional structure, excellent electrical conductivity, and diverse surface groups of MXenes have garnered significant attention. Coupled with their exceptional flexibility, MXene‐based devices hold immense potential for flexible memory and neuromorphic systems. This review comprehensively discusses the fundamentals of flexible devices,
Yan Li +13 more
wiley +1 more source
Preparation of Infrared Anti-Reflection Surfaces Based on Microcone Structures of Silicon Carbide. [PDF]
Li R +5 more
europepmc +1 more source
This study explores the covalent functionalization of Ti3C2Tx using 5,5′‐bis(triisopropoxysilyl)‐2,2′‐bipyridine in different solvents, revealing that only m‐xylene enables effective covalent bonding, ensuring structural stability and preventing layer swelling.
Abelardo Sánchez‐Oliva +11 more
wiley +1 more source
Simulation Analysis of the Chemical Mechanical Polishing Process for Monocrystal 4H-Silicon Carbide Based on Molecular Dynamics. [PDF]
Lei Y, Guo W, Feng K, Sun Z.
europepmc +1 more source
ABSTRACT Achieving laterally uniform graphene coatings via low‐pressure chemical vapor deposition (LPCVD) remains challenging due to substrate‐scale variations in near‐wall transport that govern precursor renewal and local growth. Here, transient 3D CFD is coupled with spatially resolved characterization to examine how substrate inclination reorganizes
Tanuj Joshi +2 more
wiley +1 more source
Characterization of silicon carbide diodes as cost-effective active detectors for proton UHDR dosimetry. [PDF]
Lopez Paz I +7 more
europepmc +1 more source

