Results 291 to 300 of about 1,006,667 (349)
Some of the next articles are maybe not open access.
Physics Today, 1959
There exists a need, especially in the cases of some military applications, for a stable, high-temperature semiconductor material. Active and passive devices fabricated from such a material could operate in a high-temperature ambient and simultaneously resist radiation damage.
openaire +1 more source
There exists a need, especially in the cases of some military applications, for a stable, high-temperature semiconductor material. Active and passive devices fabricated from such a material could operate in a high-temperature ambient and simultaneously resist radiation damage.
openaire +1 more source
Silicon Carbide as a Protective Layer to Stabilize Si-Based Anodes by Inhibiting Chemical Reactions.
Nano letters (Print), 2019The poor cycling performance of silicon-based (Si-based) anodes hinder their practical application. Here, a fresh and fundamental mechanism is proposed for the rapid capacity decay of Si-based materials.
Chunhui Yu +8 more
semanticscholar +1 more source
1991
A process is described for forming silicon carbide coatings on nickel based superalloys by: i) nitriding the alloy or depositing a titanium nitride film on the alloy by reactive sputtering; ii) vapour phase chemica deposition of a thin film of titanium nitride; iii) annealing in a nitrogen and hydrogen atmosphere; iv) vapour phase chemical deposition ...
V. Adoncecchi +3 more
openaire +2 more sources
A process is described for forming silicon carbide coatings on nickel based superalloys by: i) nitriding the alloy or depositing a titanium nitride film on the alloy by reactive sputtering; ii) vapour phase chemica deposition of a thin film of titanium nitride; iii) annealing in a nitrogen and hydrogen atmosphere; iv) vapour phase chemical deposition ...
V. Adoncecchi +3 more
openaire +2 more sources
Silicon carbide microdisk resonator
Optics Letters, 2013We demonstrate a silicon carbide (SiC) microdisk resonator with an intrinsic optical quality factor of 6.19×10(3), fabricated on the 3C-SiC-on-Si platform. We characterize the temperature dependence of the cavity resonance and obtain a thermo-optic coefficient of 2.92×10(-5)/K for 3C-SiC.
Xiyuan, Lu +3 more
openaire +2 more sources
On-Demand Generation of Single Silicon Vacancy Defects in Silicon Carbide
ACS Photonics, 2019Defects in silicon carbide have been explored as promising spin systems in quantum technologies.
Jun-Feng Wang +13 more
semanticscholar +1 more source
Silicon Carbide Monofilament‐Reinforced Silicon Nitride or Silicon Carbide Matrix Composites
Journal of the American Ceramic Society, 1989SiC‐monofilament‐reinforced SiC or Si 3 N 4 matrix composites were fabricated by hot‐pressing, and their mechanical properties and effects of filaments and filament coating layers were studied.
Hironori Kodama +2 more
openaire +1 more source
Journal of the European Ceramic Society, 2002
Abstract Interphase boundaries between SiC and h-BN grains in hot isostatically pressed Si3N4–SiC particulate composites made from both as-received powders and deoxidised powders, in which sub-micron size h-BN particles occur as a contaminant, have been characterised using transmission electron microscopy techniques.
Knowles, KM, Turan, Servet
openaire +1 more source
Abstract Interphase boundaries between SiC and h-BN grains in hot isostatically pressed Si3N4–SiC particulate composites made from both as-received powders and deoxidised powders, in which sub-micron size h-BN particles occur as a contaminant, have been characterised using transmission electron microscopy techniques.
Knowles, KM, Turan, Servet
openaire +1 more source