Results 171 to 180 of about 580,634 (294)
Advanced Electronic Materials, EarlyView.Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini +9 more
wiley +1 more source
Design and analysis of a plasmonic-nanorod-enhanced lead-free inorganic perovskite/silicon heterojunction tandem solar cell exceeding the Shockley-Queisser limit. [PDF]
RSC AdvSami MSA, Sur A, Rahman E.
europepmc +1 more source
Advanced Electronic Materials, EarlyView.Green‐engineered BiNPs&PEI N‐GQDs enable dual‐emission p‐Si Schottky photodetectors with strong photoresponse, long‐term stability, and a simple scalable fabrication strategy, offering a promising route for sustainable optoelectronic and photosensing applications.
Zeynep Berktaş +6 more
wiley +1 more source
Numerical Investigation of Perovskite/Silicon Heterojunction Tandem Solar Cell with a Dual-Functional Layer of MoO<sub>X</sub>. [PDF]
Materials (Basel)Lu TY, Wang J, Feng XD.
europepmc +1 more source
Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers
, 2006 Hydrogenated nanocrystalline silicon (nc-Si:H) n-layers have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) wafers.
Diao HW (Diao Hongwei) +11 more
core
Advancing Energy Materials by In Situ Atomic Scale Methods
Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss +21 more
wiley +1 more source
27.09%-efficiency silicon heterojunction back contact solar cell and going beyond. [PDF]
Nat CommunWang G +12 more
europepmc +1 more source
Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance
, 2004 The vertical MOSFET structure is one of the solutions for reducing the channel length of transistors under 50nm. Surround gates can be easily realised in vertical MOSFETs which offer increased channel width per unit silicon area.
Uchino, T +8 more
core
Smart Exploration of Perovskite Photovoltaics: From AI Driven Discovery to Autonomous Laboratories
Advanced Energy Materials, EarlyView.In this review, we summarize the fundamentals of AI in automated materials science, and review AI applications in perovskite solar cells. Then, we sum up recent progress in AI‐guided manufacturing optimization, and highlight AI‐driven high‐throughput and autonomous laboratories.
Wenning Chen +4 more
wiley +1 more source
Advanced Energy Materials, EarlyView.A wide process window is essential for the commercialization of perovskite photovoltaics. Here, we demonstrate an amorphous π‐conjugated passivator having an asymmetric mono‐iodine substituent on a carbazole moiety imparts a high dipole moment, desirable molecular energy levels, and high thickness tolerance, thereby enabling a wide process window in ...
Hyun Seo Kim +17 more
wiley +1 more source