Results 11 to 20 of about 5,993 (241)

Optimization and Fabrication of Heterojunction Silicon Solar Cells Using an Experimental-Industrial Facility AK-1000 Inline

Известия высших учебных заведений России: Радиоэлектроника, 2020
Introduction. Heterojunction silicon solar cells represent one of the most promising directions for the development of solar photovoltaics. This is due to both their high power conversion efficiency and reasonable likelihood for further growth in ...
N. A. Chuchvaga, J. Schulze, V. V. Klimenov, K. S. Zholdybayev, K. P. Aimaganbetov, S. R. Zhantuarov, A. S. Serikkanov, E. I. Terukov, S. Zh. Tokmoldin, N. S. Tokmoldin   +9 more
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High Quantum Efficiency and Broadband Photodetector Based on Graphene/Silicon Nanometer Truncated Cone Arrays

Sensors, 2021
Light loss is one of the main factors affecting the quantum efficiency of photodetectors. Many researchers have attempted to use various methods to improve the quantum efficiency of silicon-based photodetectors. Herein, we designed highly anti-reflective
Jijie Zhao, Huan Liu, Lier Deng, Minyu Bai, Fei Xie, Shuai Wen, Weiguo Liu   +6 more
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Research Progress of Silicon-Based Heterojunction Mid-Wave Infrared Photodetectors [PDF]

Hangkong bingqi
Mid-wave infrared photodetector is an important photoelectric detection equipment, which uses the photoelectric effect to convert infrared radiation into electrical signals.
Zeng Yuling, Feng Song, Ma Baoke, He Xinyi, Wu Jianyang, Li Haojie
doaj   +1 more source

Technology of fabrication of CDSXTe1-X solid solution on silicon substrate [PDF]

E3S Web of Conferences, 2023
Heterojunction between Si and CdSxTe1-x have been obtained by vacuum deposition of powders of cadmium sulfide and cadmium telluride on the surface of monocrystalline silicon.
Sapaev I. B., Sapaev B., Babajanov D.
doaj   +3 more sources

Recent Advances in Photodetectors Based on Two-Dimensional Material/Si Heterojunctions

Applied Sciences, 2023
Two-dimensional (2D) materials have gained significant attention owing to their exceptional electronic and optoelectronic properties, including high carrier mobility, strong light–matter interaction, layer-dependent band structure and band gap.
Yiyang Wei, Changyong Lan, Shuren Zhou, Chun Li   +3 more
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Heterojunction for Silicon Photovoltaics [PDF]

, 2013
The amorphous/crystalline silicon heterojunction solar cell fascinated the researchers since the beginning as a way to improve the efficiency of silicon based solar cell and to reduce the cost of the PV. Indeed with the aid of a heterojunction it is possible to achieve higher built-in voltage and higher cell open circuit voltage with respect to the ...
Tucc,i M., Serenelli, L., Izzi M., Salza, E., De Iuliis, S., Mangiapane, P., DE CESARE, Giampiero, CAPUTO, Domenico   +7 more
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Nanopatterned Silicon Substrate Use in Heterojunction Thin Film Solar Cells Made by Magnetron Sputtering

International Journal of Photoenergy, 2014
This paper describes a method for fabricating silicon heterojunction thin film solar cells with an ITO/p-type a-Si : H/n-type c-Si structure by radiofrequency magnetron sputtering.
Shao-Ze Tseng, Chang-Rong Lin, Hung-Sen Wei, Chia-Hua Chan, Sheng-Hui Chen   +4 more
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Electrical and Electronical Properties of Silicon Nanostructure Produced by Electronical Etching [PDF]

Engineering and Technology Journal, 2009
Porous silicon constituting silicon nanostructures layer have been produce on crystal silicon using different preparation condition in electronical etching process.
B. G. Rasheed, E. T. Saleem
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Characterization of silicon heterojunctions for solar cells [PDF]

Nanoscale Research Letters, 2011
AbstractConductive-probe atomic force microscopy (CP-AFM) measurements reveal the existence of a conductive channel at the interface between p-type hydrogenated amorphous silicon (a-Si:H) and n-type crystalline silicon (c-Si) as well as at the interface between n-type a-Si:H and p-type c-Si.
Kleider, Jean-Paul, Alvarez, José, Ankudinov, A.V., Gudovskikh, A.S., Gushina, E.V., Labrune, M., Maslova, Olga, Favre, Wilfried, Gueunier-Farret, Marie-Estelle, Roca I Cabarrocas, Pere, Terukov, E.I   +10 more
openaire   +6 more sources

Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor

Sensors, 2012
A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain.
Xiaofeng Zhao, Dianzhong Wen, Gang Li
doaj   +1 more source