Results 201 to 210 of about 5,993 (241)

The Rise of Organic Electrochemical Transistors for Brain‐Inspired Neuromorphic Computing

Advanced Electronic Materials, Volume 12, Issue 5, 9 March 2026.
This review provides a comprehensive overview of organic electrochemical transistors (OECTs) for brain‐inspired computing. From fundamental device physics and material engineering to system‐level integration, it highlights OECTs' unique mixed ionic‐electronic conduction capabilities.
Heejin Kim, Hyunhak Jeong, Gunuk Wang
wiley   +1 more source

All-Optically Controlled Terahertz Modulation by Silicon-Grown CdSe/CdZnS Colloidal Quantum Wells. [PDF]

Nanomaterials (Basel)
Tudi R, Zhang Z, Song X, AbulimitiYasen, Abulimiti B, Xiang M.   +5 more
europepmc   +1 more source

Infrared visualized snakes-inspired artificial vision systems with CMOS sensors-integrated upconverters. [PDF]

Light Sci Appl
Mu G, Lin Y, Fu K, Tang X.
europepmc   +1 more source

A Trench Heterojunction Diode-Integrated 4H-SiC LDMOS with Enhanced Reverse Recovery Characteristics. [PDF]

Micromachines (Basel)
Liu Y, Bai F, Fang J.
europepmc   +1 more source

Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT. [PDF]

Micromachines (Basel)
Baca-Arroyo R.
europepmc   +1 more source

High-Temperature Electrical Transport Behavior of p-Doped Boron Diamond Film/n-WS₂ Nanosheet Heterojunction. [PDF]

Nanomaterials (Basel)
Li C, Sang D, Shi Y, Ge S, Du L, Wang Q.
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

Diamond/silicon heterojunction structures

Diamond and Related Materials, 1992
Abstract Diamond/silicon heterojunctions (DSHJs) and related characteristics have been studied. Heterojunctions can be obtained by growing p-type diamond films (DFs) on p-type silicon substrates to form homotype (p-p) DSHJs; or by growing p-type diamond films on n-type silicon substrates to form heterotype (p-n) DSHJs via the route of chemical vapor ...
David G. Jeng, H.S. Tuan, Robert F. Salat, Glenn J. Fricano, Fred Y. Chen   +4 more
openaire   +1 more source

Polyaniline / silicon heterojunctions

Synthetic Metals, 1991
Abstract The p-n and p-p polyaniline PAn/Si heterojunctions have been prepared and investigated. It is demonstrated experimentally that the p-n PAn/si heterojunction is a fine rectifying junction with obvious photoelectrical characteristics, and the barrier of the p-n PAn/Si heterojunction is mostly concentrated at the surface of Si.
Yuan Renkuan, Yuan Hong, Zou Zheng, Zheng Youdou, Wang Yongan   +4 more
openaire   +1 more source