Results 211 to 220 of about 5,993 (241)

A silicon heterojunction transistor

Applied Physics Letters, 1979
SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing
T. Matsushita, N. Oh-uchi, H. Hayashi, H. Yamoto   +3 more
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High Detectivity Graphene‐Silicon Heterojunction Photodetector

Small, 2015
A graphene/n‐type silicon (n‐Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high‐performance photodetectors. However, graphene/n‐Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark ...
Xinming, Li, Miao, Zhu, Mingde, Du, Zheng, Lv, Li, Zhang, Yuanchang, Li, Yao, Yang, Tingting, Yang, Xiao, Li, Kunlin, Wang, Hongwei, Zhu, Ying, Fang   +11 more
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Photovoltage spectra of silicon/porous silicon heterojunction

Solid State Communications, 1994
Abstract The photovoltage spectroscopy of silicon/porous silicon hetero-junction has been studied, and proved to be a successful method to analyze the electronic structure of both silicon/porous silicon heterojuction and porous silicon. A series of excitation energy steps were observed at the photovoltage spectra of porous silicon. It is suggested to
Feng Yan, Xi-Mao Bao, Ting Gao
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Light emitting porous silicon diode based on a silicon/porous silicon heterojunction

Journal of Applied Physics, 1999
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light emitting diodes (LED). It is based on a heterojunction between n-type doped silicon and PS. The heterojunction is formed due to the doping selectivity of the etching process used to form PS.
Pavesi L, Chierchia R, Bellutti P, Lui A, Fuso F, Labardi M, Pardi L, Sbrana F, Allegrini M, Trusso S, Vasi C, Ventura PJ, Costa LC, Carmo MC, Bisi O   +14 more
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Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells

2013
Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve ...
Wolfgang Fahrner, Thomas Mueller, Stefan Schwertheim, Frank Wuensch, NEITZERT, Heinrich Christoph, Haibin Huang   +5 more
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SIPOS Heterojunction contacts to silicon

1984 International Electron Devices Meeting, 1984
Using SIPOS films (SiO x , x oe , by at least a factor of fifty when compared to a conventional emitter structure with a metallic contact. Previous attempts to explain this J oe reduction have focused on the bulk properties of the SIPOS films. Experimental results of this study which attained J oe values of 2 × 10-14A/cm2, suggest that an interfacial ...
Y.H. Kwark, R. Sinton, R.M. Swanson
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Lead selenide–silicon heterojunctions

Physica Status Solidi (a), 1970
PbSeSi heterojunctions were made by depositing PbSe onto lapped Si wafers in a high pH aqueous solution at room temperature. Current–voltage and relative spectral response measurements are reported. The results are similar to those reported previously for PbSSi heterodiodes.
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A Diamond Silicon Heterojunction Diode

MRS Proceedings, 1989
ABSTRACTThin diamond films were grown on low resistivity p-type Si wafers by microwave plasma assisted chemical vapor deposition. Using gold contacts, diode-like behavior was observed and forward bias current densities in excess of 5 A/cm2 were obtained. Reverse bias current densities were as low as 5 mA/cm2.
C. L. Ellison, R. M. Cohen, J. T. Hoggins   +2 more
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Strained-Silicon Heterojunction Bipolar Transistor

IEEE Transactions on Electron Devices, 2010
Experimental and modeling results are reported for high-performance strained-silicon heterojunction bipolar transistors (HBTs), comprising a tensile strained-Si emitter and a compressively strained Si0.7Ge0.3 base on top of a relaxed Si0.85Ge0.15 collector.
Persson S, Fjer M, Escobedo-Cousin E, Olsen SH, Malm G, Wang YB, Hellstrom PE, Ostling M, O'Neill AG   +8 more
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Silicon heterojunctions

1996
The three topics presented in this thesis all concern silicon heterojunction growth and device applications. We developed growth techniques for two relatively immature material systems, silicon/calciumfluoride (Si/CaF2) and silicon/silicon-carbon (Si/Si1-yCy), and fabricated devices which take the mature silicon/silicon dioxides (Si/SiO2) material ...
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