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Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells
2014Silicon heterojunction solar cells are crystalline silicon-based devices in which thin amorphous silicon layers deposited on the wafer surfaces serve as passivated, carrier-selective contacts. The success of this technology is attributable to the ability of amorphous silicon to passivate dangling bonds—thereby removing surface recombination sites ...
Christophe Ballif +3 more
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Polymorphous/Crystalline Silicon Heterojunction Solar Cells:Optimization on Monocrystalline Silicon
200723rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 1696 ...
Ribeyron, P.J. +7 more
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Amorphous silicon/crystalline silicon heterojunctions for solar cells
Journal of Non-Crystalline Solids, 2002Amorphous silicon/crystalline silicon (c-Si) heterojunctions are studied by contactless transient photoconductivity measurements at the microwave frequency range. Excellent passivation of the n-type crystalline silicon (n c-Si) surface by n-type, hydrogenated amorphous silicon (n a-Si:H) films is observed. The influence of band offsets is discussed. It
M. Kunst +3 more
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Heterojunction Silicon Based Solar Cells
2012Heterojunction (HJ) silicon solar cells use crystalline silicon wafers for both carrier transport and absorption, and amorphous and/or microcrystalline thin silicon layers for passivation and junction formation. The top electrode is comprised of a transparent conductive oxide (TCO) layer in combination with a metal grid.
Miro Zeman, Dong Zhang
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Hole-blocking TiO2/silicon heterojunction for silicon photovoltaics
70th Device Research Conference, 2012Narrow bandgap heterojunctions on crystalline silicon such as Si/Si 1−x Ge x are now in widespread use, but to date there has been little progress on widegap heterojunctions on silicon. In this abstract, we report: (i) TiO 2 /Si heterojunction with a band alignment which blocks holes from silicon but freely passes electrons, and (ii) the application ...
Sushobhan Avasthi +3 more
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Amorphous/porous heterojunction on thin microcrystalline silicon
Journal of Non-Crystalline Solids, 2000Abstract In this work we present a study of the fabrication of the junction between amorphous and porous silicon. Porous silicon was obtained by electrochemical etching of a 2 μm thick crystalline n-doped layer obtained by thermal recrystallisation of amorphous silicon deposited using chemical vapour deposition (CVD). A thin amorphous silicon emitter
A. RUBINO +4 more
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Heterojunctions based on Silicon Carbide
AIP Conference Proceedings, 2007In addition to possessing unique electrical properties, silicon carbide (SiC) can crystallize in different modifications (polytypes). Having the same chemical nature, SiC polytypes may significantly differ in their electrical parameters. In recent years, the world’s interest in fabrication and study of heteropolytype structures based on silicon carbide
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Proton Damage in Amorphous Silicon/Crystalline Silicon Heterojunction Solar Cells
Journal of The Electrochemical Society, 2006The applicability of amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction solar cells for their use in space environment was tested. The cells were subject to proton irradiation at energies between 0.8 and 4 MeV. The optical and electrical parameters were measured.
Scherff M +11 more
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Local Photovoltaic Properties of Graphene–Silicon Heterojunctions
physica status solidi (b), 2018Interfacing of materials with different dimensionalities becomes increasingly relevant for many applications which can utilize the exceptional properties of low‐dimensional materials on one hand, and build‐up on the existing production know‐how for bulk (3D) materials on the other. Numerous appealing possibilities are offered by such combinations.
Jaroslava Rahova +6 more
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Solar cells with gallium phosphide/silicon heterojunction
AIP Conference Proceedings, 2015One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more ...
Darnon, Maxime +6 more
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