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Heterojunctions on monocrystalline silicon

1993
Transparent low resistivity CdS films have been evaporated on p-Si and n-p Si monocrystalline substrates to form heterojunction solar cells. Electrical and optical properties are investigated by I-V, C-V and quantum efficiency measurements. By comparing to conventional n-p Si cells, it is found that CdS/n-p Si configuration has the advantage of ...
openaire   +1 more source

Light emitting porous silicon diode based on a silicon/porous silicon heterojunction

Journal of Applied Physics, 1999
A new structure is proposed to improve the external quantum efficiency of porous silicon (PS) light emitting diodes (LED). It is based on a heterojunction between n-type doped silicon and PS. The heterojunction is formed due to the doping selectivity of the etching process used to form PS.
Pavesi L   +14 more
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High Detectivity Graphene‐Silicon Heterojunction Photodetector

Small, 2015
A graphene/n‐type silicon (n‐Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high‐performance photodetectors. However, graphene/n‐Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark ...
Xinming, Li   +11 more
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Silicon welcomes in the heterojunction era

Physics World, 1990
The silicon bipolar junction transistor (BJT) is the usual design choice of engineers who seek 'ultimate speed' performance in applications such as supercomputer central processing units and frequency synthesis for communication systems. Great investments have been made in the drive to scale transistors to ever-smaller dimensions, reducing parasitic ...
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Amorphous silicon/crystalline silicon heterojunctions for solar cells

Journal of Non-Crystalline Solids, 2002
Amorphous silicon/crystalline silicon (c-Si) heterojunctions are studied by contactless transient photoconductivity measurements at the microwave frequency range. Excellent passivation of the n-type crystalline silicon (n c-Si) surface by n-type, hydrogenated amorphous silicon (n a-Si:H) films is observed. The influence of band offsets is discussed. It
M. Kunst   +3 more
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Heterojunctions based on Silicon Carbide

AIP Conference Proceedings, 2007
In addition to possessing unique electrical properties, silicon carbide (SiC) can crystallize in different modifications (polytypes). Having the same chemical nature, SiC polytypes may significantly differ in their electrical parameters. In recent years, the world’s interest in fabrication and study of heteropolytype structures based on silicon carbide
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Hole-blocking TiO2/silicon heterojunction for silicon photovoltaics

70th Device Research Conference, 2012
Narrow bandgap heterojunctions on crystalline silicon such as Si/Si 1−x Ge x are now in widespread use, but to date there has been little progress on widegap heterojunctions on silicon. In this abstract, we report: (i) TiO 2 /Si heterojunction with a band alignment which blocks holes from silicon but freely passes electrons, and (ii) the application ...
Sushobhan Avasthi   +3 more
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Lead selenide–silicon heterojunctions

Physica Status Solidi (a), 1970
PbSeSi heterojunctions were made by depositing PbSe onto lapped Si wafers in a high pH aqueous solution at room temperature. Current–voltage and relative spectral response measurements are reported. The results are similar to those reported previously for PbSSi heterodiodes.
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Polymorphous/Crystalline Silicon Heterojunction Solar Cells:Optimization on Monocrystalline Silicon

2007
23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain; 1696 ...
Ribeyron, P.J.   +7 more
openaire   +2 more sources

Origin of Rectification in Boron Nitride Heterojunctions to Silicon

ACS Applied Materials & Interfaces, 2013
Cubic and hexagonal boron nitride (cBN and hBN) heterojunctions to n-type Si are fabricated under low-energy ion bombardment by inductively coupled plasma-enhanced chemical vapor deposition using the chemistry of fluorine. The sp2-bonded BN/Si heterojunction shows no rectification, while the cBN/sp2BN/Si heterojunction has rectification properties ...
Kungen, Teii   +3 more
openaire   +2 more sources

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