Results 81 to 90 of about 580,634 (294)

Spike‐Type Band Alignment via in2Se3/CuI Charge‐Transport Engineering Enables 26% Efficient Lead‐Free RbSn0.5Ge0.5I3 Perovskite Solar Cells

Advanced Materials Interfaces, EarlyView.
A lead‐free and Cd‐free RbSn₀.5Ge₀.5I3 perovskite solar cell is optimized through In2Se3/CuI charge‐transport engineering using SCAPS‐1D. Spike‐type band alignment suppresses interfacial recombination, enhances charge extraction, and achieves a power conversion efficiency of 26.01%, providing an effective strategy for high‐performance and ...
Md. Al Amin, Md. Sanwar Hossain, Md. Feroz Ali, Md Shafiul Alam, Mohammad Ali, Mohammed A. AlAqil   +5 more
wiley   +1 more source

Excellent Silicon Surface Passivation Achieved by Industrial Inductively Coupled Plasma Deposited Hydrogenated Intrinsic Amorphous Silicon Suboxide

International Journal of Photoenergy, 2014
We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen ...
Jia Ge, Muzhi Tang, Johnson Wong, Zhenhao Zhang, Torsten Dippell, Manfred Doerr, Oliver Hohn, Marco Huber, Peter Wohlfart, Armin G. Aberle, Thomas Mueller   +10 more
doaj   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Properties of high efficiency silicon heterojunction cells [PDF]

, 2011
The goal to achieve grid parity for photovoltaics in the near future is stimulating the development of high efficiency solar cell technologies which has spark off strong activities in silicon heterojunction solar cell development in the recent past ...
P. Papet, Lachenal, D., Frammelsberger, W., G. Wahli, Guerin, C., Büchel, A., D.L. Bätzner, L. Andreetta, Andrault, Y., Y. Andrault, F. Wünsch, W. Frammelsberger, N. Holm, B. Rau, Meixenberger, J., D. Lachenal, Rau, B., Bätzner, D.L., A. Büchel, Holm, N., Strahm, B., Wahli, G., Wünsch, F., B. Strahm, Andreetta, L., J. Meixenberger, C. Guerin, Papet, P.   +27 more
core   +1 more source

Turning Water Into a Tool: From Degradation Pathways to Functional Engineering in Halide Perovskites

Advanced Materials Technologies, EarlyView.
Water exhibits a threshold‐dependent dual role in lead halide perovskites, acting either as a degradation trigger or as a powerful tool for defect passivation, recrystallization, and structural engineering. This review discusses how controlled water‐mediated interactions govern stability, dimensionality, and optoelectronic performance, providing ...
Raphaella T. S. Gonçalves, Gabriela O. Gera, Aryane Tofanello, Jose A. Souza, Andre L. M. Freitas   +4 more
wiley   +1 more source

Structural and electrical properties of CdO/porous-Si heterojunction

Iraqi Journal of Physics, 2012
The electrical properties of CdO/porous Si/c-Si heterojunction prepared by deposition of CdO layer on porous silicon synthesized by electrochemical etching were studied.
Raid A. Ismail
doaj  

Amorphous silicon on p-type crystalline silicon heterojunction

Revue de Physique Appliquée, 1978
A junction was grown by d.c. sputtering of n-type silicon on a p-type crystalline substrate. Ohmic contacts were deposited by evaporation of aluminum. The junction obeyed Schottky model both under forward and reverse bias conditions, but with higher idealization factor « n » due to its high internal resistance.
Aboul-Seoud, A.K., Mokhtar, O.
openaire   +1 more source

Ultrathin and Flexible Organic Light‐Addressable Potentiometric Sensors

Advanced Materials Technologies, EarlyView.
The first ultrathin, fully organic, and flexible light‐addressable potentiometric sensor (LAPS) is demonstrated. With a thickness of only 2.3–2.9 µm, this standalone film offers sensitivity to electrolyte potential and stable performance for over 170 days.
Ami Ichikawa, Yudai Hemmi, Yuanyuan Guo, Georgios Bairaktaris, Carl Frederik Werner, Tomohiko Murayama, Hiroyuki Matsui   +6 more
wiley   +1 more source

Effect of Fluorine Implantation Dose on Boron Transient Enhanced Diffusion and Boron Thermal Diffusion in Si1-xGex

, 2005
This paper studies how boron transient enhanced diffusion (TED) and boron thermal diffusion in Si1-xGex are influenced by a high-energy fluorine implant at a dose in the range 5 × 1014 cm-2 to 1 × 1016 cm-2.
Ashburn, Peter, El Mubarek, H.A.W., Bonar, J.M., Wang, Y, Ashburn, P., Hemment, Peter L F, Karunaratne, M, Bonar, J M, El Mubarek, H. A W, Karunaratne, M., Dilliway, G.D., Hemment, P L, Hemment, P.L.F., Willoughby, A.F., Dilliway, G. D., Willoughby, A F, Willoughby, A. F., Ashburn, P, Bonar, J. M., Wang, Y., Dilliway, G D, El Mubarek, H A   +21 more
core   +1 more source

Application of crystalline silicon surface oxidation to silicon heterojunction solar cells [PDF]

, 2015
We study the effect of ultra-thin oxide (SiO_x) layers inserted at the interface of silicon heterojunction (SHJ) solar cells on their open-circuit voltage (V_). The SiO_x layers can be easily formed by dipping c-Si into oxidant such as hydrogen peroxide (
Koichi Higashimine, Higashimine, Koichi, Takafumi Oikawa, Keisuke Ohdaira, Hideki Matsumura, Matsumura, Hideki, Oikawa, Takafumi, Ohdaira, Keisuke   +7 more
core   +1 more source