Results 171 to 180 of about 123,450 (287)

Optimization of Silicon Nitride Nanopowder Content in Polyamide 12 (PA12) in Extrusion-Based Additive Manufacturing. [PDF]

Nanomaterials (Basel)
Petousis M, Korlos A, Michailidis N, Papadakis VM, Argyros A, Mountakis N, Spyridaki M, Maniadi A, Moutsopoulou A, Vidakis N.   +9 more
europepmc   +1 more source

Emerging Advanced Electronic Packaging Materials for Thermal Management in Power Electronics

Advanced Science, EarlyView.
This review surveys emerging materials for thermal management in advanced electronic packaging, with emphasis on ceramic substrates and thermal interface materials. Multiscale simulations and mechanistic analyses are highlighted, alongside the emerging role of artificial intelligence in predicting thermal properties and guiding design, offering ...
Yongjun Huo, Jiaqi Song, Wenqian Li, Jian Zhang, Yujin Zhang, Yang Fu, Wangchao Yuan, Xin Chen, Sichen Liu, Miao Jiang, Yuan Cheng, Gang Zhang   +11 more
wiley   +1 more source

Demonstration of multiple-wavelength-band photonic integrated circuits using a silicon and silicon nitride 2.5D integration method. [PDF]

Nanophotonics
Fu M, Qiu H, Zhang H, Chen X, Qi J, Zhang Y, Xu Y, Liu S, Gu N, Yu H, Yi W, Li X, Guan X.   +12 more
europepmc   +1 more source

Charge Injection and Transport in an Isoindigo‐Based Polymer Transistor

Advanced Electronic Materials, EarlyView.
This study presents the charge injection and transport properties of field‐effect transistors based on an isoindigo‐bithiophene donor‐acceptor polymer semiconductor contacted with thiolated self‐assembled monolayer (SAM)‐functionalized electrodes. Temperature‐dependent contact characteristics are measured and simulated.
Zuchong Yang, Daniele Zucchelli, Melissa Berteau‐Rainville, Qi Wang, Sydney Mikulin, Ingo Salzmann, Steffen Duhm, Fabrizio Torricelli, Emanuele Orgiu   +8 more
wiley   +1 more source

Low-loss silicon nitride Kerr-microresonators fabricated with metallic etch masks via metal lift-off. [PDF]

Sci Rep
Colación GM, Rukh L, Buck FH, Drake TE.
europepmc   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, EarlyView.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Second-harmonic generation in NbOI₂-integrated silicon nitride microdisk resonators. [PDF]

Nanophotonics
Liu N, Liu Q, Lin Y, Zhu Z, Liu K.
europepmc   +1 more source

Environmental Stability and Electronic Properties of Individual Flakes of Ti2CTx MXene

Advanced Electronic Materials, EarlyView.
The paper presents a synthesis of large Ti2CTx MXene flakes with sizes reaching 40 µm and examines their environmental stability and electronic behavior. It demonstrates that monolayer flakes degrade rapidly in ambient conditions, leading to semiconducting‐like behavior with low conductivity and mobility. In contrast, multilayer flakes exhibit enhanced
Md. Ibrahim Kholil, Alexey Lipatov, Saman Bagheri, Hanna Pazniak, Venera Alimova, Alexander Sinitskii   +5 more
wiley   +1 more source

Preserving the Josephson Coupling of Twisted Cuprate Junctions via Tailored Silicon Nitride Circuits Boards. [PDF]

Small
Confalone T, Lo Sardo F, Montemurro D, Massarotti D, Vinokur VM, Gu G, Tafuri F, Nielsch K, Haider G, Poccia N.   +9 more
europepmc   +1 more source

Proximity Ferroelectricity in Compositionally Graded Structures

Advanced Electronic Materials, EarlyView.
We perform the finite element modeling of the polarization switching in the compositionally graded AlN‐Al1‐xScxN and ZnO‐Zn1‐xMgxO structures and reveal the switching of spontaneous polarization in the whole structure in all these systems. The coercive field to switch is significantly lower than the electric breakdown field of the unswitchable AlN and ...
Eugene A. Eliseev, Anna N. Morozovska, Sergei V. Kalinin, Long‐Qing Chen, Venkatraman Gopalan   +4 more
wiley   +1 more source